N Channel Trench Power MOSFET MCC 2N7002KS TP Featuring Halogen Free Green Device and ESD Protection

Key Attributes
Model Number: 2N7002KS-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.4pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
16pF
Gate Charge(Qg):
880pC@10V
Mfr. Part #:
2N7002KS-TP
Package:
SOT-23
Product Description

Product Overview

The 2N7002KS is an N-Channel Trench Power MV MOSFET from MCC Semi, designed with ESD protection up to 2KV (HBM). This halogen-free, "Green" device features a UL 94 V-0 flammability rating and a lead-free finish, making it RoHS compliant. It operates within a wide junction temperature range of -55C to +150C and offers a low thermal resistance of 357C/W (Junction to Ambient). Its robust construction and electrical characteristics make it suitable for various electronic applications requiring efficient switching and power management.

Product Attributes

  • Brand: MCC SEMI
  • Model: 2N7002KS
  • Technology: Trench Power MV MOSFET
  • ESD Protection: Up to 2KV (HBM)
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. Green Device
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Compliance: Lead Free Finish/RoHS Compliant
  • Packaging Suffix: "P" Suffix Designates RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 2.5 V
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 1.5 A
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1.8 A
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=200mA 3
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 1.2
Forward Transconductance gFS VDS=5V, ID=300mA 300 mS
Continuous Body Diode Current IS 0.35 A
Diode Forward Voltage VSD VGS=0V, IS=300mA 1.36 V
Input Capacitance Ciss VDS=30V, VGS=0V, f=1MHz 130 pF
Output Capacitance Coss VDS=30V, VGS=0V, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=30V, VGS=0V, f=1MHz 4.4 pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=300mA 3.1 nC
Gate-Source Charge Qgs VDS=30V, VGS=10V, ID=300mA 0.88 nC
Gate-Drain Charge Qgd VDS=30V, VGS=10V, ID=300mA 0.25 nC
Turn-On Delay Time td(on) VDD=30V, VGS=10V, RG=50, RL=250 3 nS
Turn-On Rise Time tr VDD=30V, VGS=10V, RG=50, RL=250 11 nS
Turn-Off Delay Time td(off) VDD=30V, VGS=10V, RG=50, RL=250 16 nS
Turn-Off Fall Time tf VDD=30V, VGS=10V, RG=50, RL=250 11 nS
Reverse Recovery Time trr IF=300mA, dIF/dt=100A/s 100 nS
Reverse Recovery Charge Qrr IF=300mA, dIF/dt=100A/s 1 nC
Gate Resistance Rg 3
Operating Junction Temperature Range TJ -55 +150 C
Storage Temperature Range TS -55 +150 C
Thermal Resistance RJA Junction to Ambient (Note 2) 357 C/W
Continuous Drain Current ID TA=25C (Note 4) 0.34 A
Continuous Drain Current ID TA=70C (Note 4) 0.27 A
Pulsed Drain Current IDM (Note 3) 1.36 A
Total Power Dissipation PD (Note 4) 0.35 W

Package Dimensions (SOT-23)

DIM INCHES MM NOTE
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50 0.007 / 0.20

Ordering Information

Device Packing Part Number
2N7002KS Tape&Reel: 3Kpcs/Reel 2N7002KS-TP

2410010332_MCC-2N7002KS-TP_C19983525.pdf

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