Power switching N channel MOSFET featuring Minos MPG100N07P with low gate charge and ultra low RDS
Key Attributes
Model Number:
MPG100N07P
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
100A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Output Capacitance(Coss):
440pF
Input Capacitance(Ciss):
3.2nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
40nC
Mfr. Part #:
MPG100N07P
Package:
TO-220
Product Description
Product Overview
The MPG100N07P is a high-performance N-channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its design emphasizes high ESD capability, high density cell structure for ultra-low Rdson, and robust avalanche energy characteristics for stability and uniformity.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Advanced trench technology
- Color: N/A
- Certifications: N/A
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 70 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 100 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 340 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 125 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 370 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 70 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=45A (Note 3) | - | 6.5 | 7.5 | mΩ |
| Forward Transconductance | GFS | VDS=10V,ID=20A | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, F=1.0MHz | - | 3200 | - | pF |
| Output Capacitance | Coss | - | 440 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=30A, VGS=10V,RGEN=6Ω | - | 16 | - | nS |
| Turn-on Rise Time | tr | - | 95 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 47 | - | nS | |
| Turn-Off Fall Time | tf | - | 31 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=20A VGS=10V | - | 40 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | nC | |
| Gate-Drain Charge | Qg d | - | 15 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=100A (Note 3) | - | - | 1.2 | V |
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.2 | °C/W | |||
2410122012_Minos-MPG100N07P_C22389982.pdf
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