Voltage controlled small signal MOSFET MCC 2N7002KW TP with UL 94 V 0 rating and halogen free design
Key Attributes
Model Number:
2N7002KW-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
5.3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2N7002KW-TP
Package:
SOT-323-3
Product Description
Product Overview
This document details a high-density cell design MOSFET, offering a voltage-controlled small signal switch. It is designed for low RDS(ON) and meets UL 94 V-0 flammability rating. The device is Moisture Sensitivity Level 1, Halogen Free (Green Device), and Lead Free/RoHS Compliant. It operates within a junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C.
Product Attributes
- Brand: MCCSEMI.COM
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free (Green Device), Lead Free/RoHS Compliant
- Packaging: Tape & Reel (3Kpcs/Reel)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=1mA | 1.0 | 2.0 | V | |
| Gate-Body Leakage Current | IGSS | VGS=0V, VDS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=500mA | 5 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=200mA | 3 | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 10 | pF | ||
| Turn-On Delay Time | td(on) | VDD=50V,VGS=10V,RL=25, RGS=50,RGEN=25 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=50V,VGS=10V,RL=25, RGS=50,RGEN=25 | 15 | ns | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Reverse Recovery Time | trr | VGS=0V, IS=300mA,VR=25V, dl/dt=-100A/s | 3 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | IGS=1mA (Open Drain) | 21.5 | 30 | V | |
| Maximum Ratings: Drain-Source Voltage | VDS | 60 | V | |||
| Maximum Ratings: Gate-Source Voltage | VGS | 20 | V | |||
| Maximum Ratings: Power Dissipation | PD | 0.20 | W | |||
| Maximum Ratings: Operating Junction Temperature Range | -55 | +150 | C | |||
| Maximum Ratings: Storage Temperature | -55 | +150 | C | |||
| Maximum Ratings: Thermal Resistance Junction to Ambient | 625 | C/W |
2409302332_MCC-2N7002KW-TP_C2975470.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
