Power MOSFET Minos MDT30N10 N Channel 100 Volt 30 Amp TO 252 Package Suitable for Switching Circuits
Key Attributes
Model Number:
MDT30N10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
2.55nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
MDT30N10
Package:
TO-252
Product Description
Product Overview
The MDT30N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Characteristics | ||||||
| VDS | 100 | V | ||||
| ID | 30 | A | ||||
| RDS(ON) | VGS=10V | 26 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 100 | A | |||
| Maximum Power Dissipation(Tc=25) | PD | 70 | W | |||
| Single pulse avalanche energy(Note 2) | EAS | 96 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 3.5 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance(Note 3) | RDS(ON) | VGS=10V, ID=12A | - | 25 | 30 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 2550 | - | pF |
| Output Capacitance | Coss | - | 225 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 205 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10 | - | 29 | - | nS |
| Turn-on Rise Time | tr | - | 13 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 58.2 | - | nS | |
| Turn-Off Fall Time | tf | - | 13.4 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=20A, VGS=10V | - | 55 | - | nC |
| Gate-Source Charge | Qgs | - | 15 | - | nC | |
| Gate-Drain Charge | Qgd | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25IF=10A di/dt=100A/uS note3 | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | - | 110 | - | nC | |
2410281701_Minos-MDT30N10_C5355276.pdf
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