MDD Microdiode Semiconductor MDDG04R06Q 40V N Channel MOSFET with Soft Body Diode and Low On Resistance
Key Attributes
Model Number:
MDDG04R06Q
Product Custom Attributes
Mfr. Part #:
MDDG04R06Q
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The MDDG04R06Q is a 40V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for minimal on-state resistance and superior switching performance, featuring a best-in-class soft body diode. It is 100% UIS and dVDS tested.
Product Attributes
- Brand: MDD Semiconductor
- Package: PDFN3*3-8L
- Marking: MDDG04R06Q
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Unit | Condition | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | V | VGS=0V, ID=250A | 40 | ||
| Gate-Source Voltage | VGS | V | 20 | |||
| Continuous Drain Current | ID | A | TC=25C (Note 1) | 60 | ||
| Pulsed Drain Current | IDM | A | Note 2 | 240 | ||
| Single Pulsed Avalanche Energy | EAS | mJ | Note 3 | 56 | ||
| Power Dissipation | PD | W | TA=25C | 45 | ||
| Thermal Resistance, steady-state | RJA | C/W | TA=25C | 26 | ||
| Junction Temperature | TJ | C | 150 | |||
| Storage Temperature | Tstg | C | -55 | +150 | ||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Drain-Source Leakage Current | IDSS | A | VDS=40V, VGS=0V | 1 | ||
| Gate-Source Leakage Current | IGSS | nA | VGS=20V, VDS=0V | 100 | ||
| Gate Threshold Voltage | VGS(TH) | V | VDS=VGS, ID=250A | 1.35 | 2.5 | |
| Drain-Source On-State Resistance | RDS(ON) | m | VGS=10V, ID=20A | 5.5 | ||
| Drain-Source On-State Resistance | RDS(ON) | m | VGS=4.5V, ID=15A | 5.9 | 8.5 | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | ns | VGS=10V, VDD=20V, ID=30A, RG=6 | 6.5 | ||
| Turn on Rise Time | tr | ns | VGS=10V, VDD=20V, ID=30A, RG=6 | 9 | ||
| Turn Off Fall Time | tf | ns | VGS=10V, VDD=20V, ID=30A, RG=6 | 26 | ||
| Turn Off Delay Time | td(off) | ns | VGS=10V, VDD=20V, ID=30A, RG=6 | 56 | 84 | |
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | pF | VGS=0V, VDS=20V, f=1MHz | 875 | ||
| Output Capacitance | Coss | pF | VGS=0V, VDS=20V, f=1MHz | 16 | ||
| Reverse Transfer Capacitance | Crss | pF | VGS=0V, VDS=20V, f=1MHz | 4.5 | ||
| Total Gate Charge | Qg | nC | VGS=0 to 10V, VDS=20V, ID=20A | 52 | ||
| Gate Source Charge | Qgs | nC | VGS=0 to 10V, VDS=20V, ID=20A | 17 | ||
| Gate Drain Charge | Qgd | nC | VGS=0 to 10V, VDS=20V, ID=20A | 5.5 | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | V | IS=10A, VGS=0V | 0.8 | 1.0 | |
| Body Diode Reverse Recovery Time | trr | ns | IF=20A, di/dt=100A/s | 25 | ||
| Body Diode Reverse Recovery Charge | Qrr | nC | IF=20A, di/dt=100A/s | 9.6 | ||
2512021845_MDD-Microdiode-Semiconductor-MDDG04R06Q_C53069236.pdf
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