Silicon N Channel MOSFET Minos MP40N30P with 300V Drain to Source Voltage and 40A Continuous Current
Key Attributes
Model Number:
MP40N30P
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
40A
RDS(on):
110mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.3pF
Number:
1 N-channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
3.65nF
Pd - Power Dissipation:
390W
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
MP40N30P
Package:
TO-220
Product Description
Product Overview
The MP40N30 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | MP40N30 | MD40N30 | Unit | Conditions |
| Drain-to-Source Voltage (VDS) | 300 | V | ||
| Continuous Drain Current (ID) | 40 | A | TC = 25C | |
| Continuous Drain Current (ID) | 26 | A | TC = 100C | |
| Pulsed Drain Current (IDM) | 160 | A | Note1 | |
| Gate-to-Source Voltage (VGS) | 30 | V | ||
| Single Pulse Avalanche Energy (EAS) | 1800 | mJ | Note2 | |
| Peak Diode Recovery dv/dt | 5.0 | V/ns | Note3 | |
| Power Dissipation (PD) | 390 | W | ||
| Derating Factor above 25C | 3.1 | W/ | ||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 150 | |||
| Maximum Temperature for Soldering (TL) | 300 | |||
| Junction-to-Case Thermal Resistance (RJC) | 0.32 | /W | ||
| Junction-to-Ambient Thermal Resistance (RJA) | 62.5 | /W | ||
| Drain to Source Breakdown Voltage (BVDSS) | 300 | V | VGS=0V, ID=250A | |
| Bvdss Temperature Coefficient | 0.24 | V/ | ID=250uA, Reference25 | |
| Drain to Source Leakage Current (IDSS) | 1 | A | VDS=300V, VGS= 0V, Tj = 25 | |
| Drain to Source Leakage Current (IDSS) | 10 | A | VDS=240V, VGS= 0V, Tj = 125 | |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS=+30V | |
| Gate to Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS=-30V | |
| Drain-to-Source On-Resistance (RDS(ON)) | 0.09 | VGS=10V, ID=20A(Note4) | ||
| Drain-to-Source On-Resistance (RDS(ON)) | 0.11 | VGS=10V, ID=20A(Note4) | ||
| Gate Threshold Voltage (VGS(TH)) | 3 | V | VDS = VGS, ID = 250A(Note4) | |
| Gate Threshold Voltage (VGS(TH)) | 2 | V | VDS = VGS, ID = 250A(Note4) | |
| Gate Threshold Voltage (VGS(TH)) | 4 | V | VDS = VGS, ID = 250A(Note4) | |
| Gate Resistance (Rg) | 1.6 | f = 1.0MHz | ||
| Input Capacitance (Ciss) | 3650 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Output Capacitance (Coss) | 350 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 4.3 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Turn-on Delay Time (td(ON)) | 81 | ns | ID =40A, VDD = 125V, VGS = 10V, RG =15 | |
| Rise Time (tr) | 618 | ns | ID =40A, VDD = 125V, VGS = 10V, RG =15 | |
| Turn-Off Delay Time (td(OFF)) | 137 | ns | ID =40A, VDD = 125V, VGS = 10V, RG =15 | |
| Fall Time (tf) | 180 | ns | ID =40A, VDD = 125V, VGS = 10V, RG =15 | |
| Total Gate Charge (Qg) | 63 | nC | ID =40A, VDD =240V, VGS = 10V | |
| Gate to Source Charge (Qgs) | 20.5 | nC | ID =40A, VDD =240V, VGS = 10V | |
| Gate to Drain (Miller)Charge (Qgd) | 16.5 | nC | ID =40A, VDD =240V, VGS = 10V | |
| Continuous Source Current (IS) (Body Diode) | 40 | A | TC=25 C | |
| Maximum Pulsed Current (ISM) (Body Diode) | 160 | A | ||
| Diode Forward Voltage (VSD) | 1.2 | V | IS=40A, VGS=0V(Note4) | |
| Reverse Recovery Time (Trr) | 225 | ns | IS=40A, Tj = 25C, dIF/dt=100A/us, VGS=0V | |
| Reverse Recovery Charge (Qrr) | 2148 | nC | IS=40A, Tj = 25C, dIF/dt=100A/us, VGS=0V | |
2410171639_Minos-MP40N30P_C41433073.pdf
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