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quality N Channel MOSFET MDD Microdiode Semiconductor MDD50N10D optimized for power management applications factory
quality N Channel MOSFET MDD Microdiode Semiconductor MDD50N10D optimized for power management applications factory

N Channel MOSFET MDD Microdiode Semiconductor MDD50N10D optimized for power management applications

Key Attributes
Model Number: MDD50N10D
Product Custom Attributes
Mfr. Part #:
MDD50N10D
Package:
TO-252
Product Description

This N-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management applications in Telecom, Industrial Automation, Motor Drives, and Uninterruptible Power Supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.

Product Attributes

  • Brand: MDD
  • Product Line: Power Trench
  • Channel Type: N-Channel Enhancement Mode
  • Certifications: RoHS Compliant
  • Origin: Craftsman-Made Consciention Chip

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 100 V
Continuous Drain Current (Note 1) ID TA=25C 50 A
Pulsed Drain Current (Note 2) IDM TA=25C 200 A
Power Dissipation (Note 1) PD TA=25C 25 W
Gate-Source Voltage VGS 20 V
Junction Temperature TJ -55 +150 C
Storage Temperature Tstg -55 +150 C
Single Pulsed Avalanche Energy (Note 3) EAS TJ=25C, VDD=50V, VGS=10V, L= 0.5mH, Rg= 25, IAS=10A 200 mJ
Thermal Resistance, steady-state RJA 60 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=20V, VGS=0V 100 nA
Drain-Source Leakage Current IDSS VDS=100V, VGS=0V 250 A
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A 2.0 4.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A 17 23 m
Max RDS(on) VGS = 10 V, ID = 20 A 17 m
Switching Characteristics
Turn on Delay Time td(on) VDD =50V, ID=40A, RG=3 25 ns
Turn on Rise Time tr VDD =50V, ID=40A, RG=3 56 ns
Turn Off Fall Time tf VDD =50V, ID=40A, RG=3 189 ns
Turn Off Delay Time td(off) VDD =50V, ID=40A, RG=3 95 ns
Source-Drain Diode Characteristics
Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V 0.8 1.2 V
Body Diode Reverse Recovery Time trr IF=20A, di/dt=100A/s 28 33 ns
Body Diode Reverse Recovery Charge Qrr IF=20A, di/dt=100A/s 6 7 nC
Dynamic Electrical Characteristics
Input Capacitance Ciss VDS=50V, VGS=0V, f=1MHz 867 pF
Output Capacitance Coss VDS=50V, VGS=0V, f=1MHz 263 pF
Reverse Transfer Capacitance Crss VDS=50V, VGS=0V, f=1MHz 13 pF
Total Gate Charge Qg VDD=50V, ID=40A, VGS=10V 23 nC
Gate Source Charge Qgs VDD=50V, ID=40A, VGS=10V 2.6 nC
Gate Drain Charge Qgd VDD=50V, ID=40A, VGS=10V 2.5 nC

2512021845_MDD-Microdiode-Semiconductor-MDD50N10D_C53069394.pdf

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