MDD Microdiode Semiconductor MDD7N65D 650V N Channel MOSFET Suitable for Switch Mode Power Supplies
Key Attributes
Model Number:
MDD7N65D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
6.1pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.09nF@25V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
20.7nC@10V
Mfr. Part #:
MDD7N65D
Package:
TO-252
Product Description
Product Overview
This 650V N-Channel Enhancement Mode MOSFET offers ultra-low gate charge, low reverse transfer capacitance, and fast switching capabilities. It is designed for high efficiency in switch mode power supplies, electronic lamp ballasts, and LED power supplies. The device features improved dv/dt capability and high ruggedness, with avalanche energy tested.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | VDS (V) | ID (Tc=25) (A) | RDS(on),max () @VGS=10V | Qg,typ (nC) | V(BR)DSS (V) | TJ (C) | Tstg (C) |
| MDD7N65F/MDD7N65P/MDD7N65D | TO-220F-3L | 650 | 7 | 1.4 | 20.7 | 650 | 150 | -55 ~150 |
| MDD7N65F/MDD7N65P/MDD7N65D | TO-220-3L | 650 | 7 | 1.4 | 20.7 | 650 | 150 | -55 ~150 |
| MDD7N65F/MDD7N65P/MDD7N65D | TO-252 | 650 | 7 | 1.4 | 20.7 | 650 | 150 | -55 ~150 |
Electrical Characteristics
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 650 | - | - | V |
| IGSS | Gate-Source Leakage Current | VGS=30V, VDS=0V | - | - | 100 | nA |
| IGSS | Gate-Source Leakage Current | VGS=-30V, VDS=0V | - | - | -100 | nA |
| IDSS | Drain-Source Leakage Current | VDS=650V, VGS=0V | - | - | 1 | uA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=3.5A | - | 1.4 | - | |
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | - | 1090 | - | pF |
| Coss | Output Capacitance | VDS=25V, VGS=0V, f=1MHz | - | 111 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=25V, VGS=0V, f=1MHz | - | 6.1 | - | pF |
| Qg | Total Gate Charge | VDS=520V, VGS=10V, ID=7A | - | 20.7 | - | nC |
| Qgs | Gate Source Charge | VDS=520V, VGS=10V, ID=7A | - | 5.7 | - | nC |
| Qgd | Gate Drain Charge | VDS=520V, VGS=10V, ID=7A | - | 7.2 | - | nC |
| td(on) | Turn on Delay Time | VDS=325V, ID=7A, RG=10 | - | - | 12.2 | ns |
| tr | Turn on Rise Time | VDS=325V, ID=7A, RG=10 | - | - | 33.4 | ns |
| td(off) | Turn Off Delay Time | VDS=325V, ID=7A, RG=10 | - | - | 53.6 | ns |
| tf | Turn Off Fall Time | VDS=325V, ID=7A, RG=10 | - | - | 15 | ns |
| ISD | Source drain current(Body Diode) | - | - | - | 7 | A |
| VSD | Drain-Source Diode Forward Voltage | IS=7A, VGS=0V | - | - | 1.5 | V |
| trr | Body Diode Reverse Recovery Time | IF=7A, -diF/dt =100A/s | - | - | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=7A, -diF/dt =100A/s | - | - | 373.2 | uC |
Thermal Characteristics
| Parameter | Symbol | TO-220F | TO-220/TO-252 | Unit |
| Thermal resistance, Junction-to-case | RJC | 3.2 | 1.25 | C/W |
| Thermal resistance, Junction-to-ambient | RJA | 110 | 62.5 | C/W |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 650 | V |
| Gate-Source Voltage | VGS | 30 | V |
| Continuous Drain Current | ID | 7 | A |
| Power Dissipation (TO-220F) | PD | 39 | W |
| Power Dissipation (TO-220/TO-252) | PD | 100 | W |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature | Tstg | -55 ~150 | C |
| Pulsed Drain Current(Note 1) | IDM | 28 | A |
| Avalanche Energy Single Pulsed (Note 2) | EAS | 352 | mJ |
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 5 | V/ns |
| Diode pulse current | IS,pulse | 28 | A |
| Continuous diode forward current | IS | 7 | A |
2408090958_MDD-Microdiode-Semiconductor-MDD7N65D_C5299404.pdf
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