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quality Lead free RoHS compliant MCC SIL2324A TP N Channel TrenchFET Power MOSFET in compact SOT23 6L package factory
quality Lead free RoHS compliant MCC SIL2324A TP N Channel TrenchFET Power MOSFET in compact SOT23 6L package factory

Lead free RoHS compliant MCC SIL2324A TP N Channel TrenchFET Power MOSFET in compact SOT23 6L package

Key Attributes
Model Number: SIL2324A-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
280mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
520pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
4.8nC@4.5V
Mfr. Part #:
SIL2324A-TP
Package:
SOT-23-6L
Product Description

Product Overview

The SIL2324A is an N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low on-resistance (RDS(ON)) and is housed in an SOT23-6L package. The device meets UL 94 V-0 flammability rating, has a Moisture Sensitivity Level 1, and is available in lead-free and RoHS-compliant versions. It is suitable for applications requiring high performance and reliability, with an operating junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Product Line: SIL2324A
  • Technology: TrenchFET Power MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Halogen Free: Available Upon Request (Suffix "-HF")
  • Lead Free/RoHS Compliant: Available (Suffix "P" designates RoHS Compliant)
  • Package Type: SOT23-6L

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 2.0 A
Power Dissipation PD 1.5 W
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance (Junction to Ambient) 85 C/W
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Threshold Voltage (Note1) VGS(th) VDS=VGS, ID=250A 1.0 2.0 V
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Drain-Source On-Resistance (Note1) RDS(on) VGS=10V, ID=2.0A 280 m
Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz 520 pF
Output Capacitance Coss 130 pF
Reverse Transfer Capacitance Crss 36 pF
Forward Transconductance gFS VDS=5V, ID=2.0A 2.0 S
Dynamic Characteristics (Note2)
Turn-On Delay Time td(on) VDD=10V, RL=2.8, VGS=4.5V, ID=1A, RGEN=6 12 ns
Turn-On Rise Time tr 250 ns
Turn-Off Delay Time td(off) 260 ns
Turn-Off Fall Time tf 1.5 ns
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=2A 4.8 nC
Gate-Source Charge Qgs 1.2 nC
Gate-Drain Charge Qgd 1.7 nC
Source-Drain Diode Characteristics
Source-Drain Diode Forward Current Is VGS=0V, IS=2A 2.0 A
Diode Forward Voltage VSD VGS=0V, IS=2A 0.9 1.2 V
Dimensions (SOT23-6L)
DIM INCHES MM MIN MAX MIN MAX
A 0.012 - 0.020 0.30 - 0.50
B 0.051 - 0.070 1.30 - 1.80
C 0.087 - 0.126 2.20 - 3.20
D 0.106 - 0.122 2.70 - 3.10
G 0.074 1.90 TYP. TYP.
H 0.037 0.95 TYP. TYP.
J 0.002 - 0.006 0.05 - 0.15
K 0.030 - 0.051 0.75 - 1.30
L 0.012 - 0.024 0.30 - 0.60
M 0.003 - 0.008 0.08 - 0.22

Notes:

  • 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • 2. These parameters have no way to verify.

2404241616_MCC-SIL2324A-TP_C914372.pdf

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