High current capability and low gate charge in Minos IRFB4310 n channel power mosfet for power switching
Key Attributes
Model Number:
IRFB4310
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V,55A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
420pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
8.05nF@25V
Pd - Power Dissipation:
230W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
IRFB4310
Package:
TO-220
Product Description
Product Overview
The IRFB4310 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its design emphasizes high ESD capability, a high-density cell structure for reduced Rds(on), and fully characterized avalanche voltage and current for robust performance and stability.
Product Attributes
- Brand: MNS-KX (implied by www.mns-kx.com)
- Origin: Shenzhen, China (implied by contact information)
- Material: Silicon (standard for MOSFETs)
- Color: N/A
- Certifications: N/A
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 110 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 440 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 230 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 600 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 0.63 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=55A (Note 3) | - | 8 | 11 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 8050 | - | pF |
| Output Capacitance | Coss | - | 480 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 420 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=50A, VGS=10V,RGEN=3 | - | 25 | - | nS |
| Turn-on Rise Time | tr | - | 24 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 90 | - | nS | |
| Turn-Off Fall Time | tf | 40 | - | - | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=55A, VGS=10V | - | 160 | - | nC |
| Gate-Source Charge | Qgs | - | 43 | - | nC | |
| Gate-Drain Charge | Qg d | - | 48 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=55A | - | - | 1.2 | V |
2410122012_Minos-IRFB4310_C19189953.pdf
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