switching MOSFET MDD Microdiode Semiconductor MDD2300 20V N Channel Enhancement Mode for power devices
Key Attributes
Model Number:
MDD2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
21.7mΩ@4.5V;29mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
66pF
Number:
1 N-channel
Output Capacitance(Coss):
71pF
Input Capacitance(Ciss):
457pF
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
6.6nC@10V
Mfr. Part #:
MDD2300
Package:
SOT-23
Product Description
Product Overview
The MDD2300 is a 20V N-Channel Enhancement Mode MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It is suitable for load switch, DC/DC converter, switching circuits, and power management applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=20V, VGS=0V | -- | -- | 1 | uA |
| Drain-Source Leakage Current | IGSS | VGS=10V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 0.45 | 1.0 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4.5A | -- | 21.7 | -- | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=2A | -- | 29.0 | -- | m |
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | -- | 457 | -- | pF |
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1MHz | -- | 71 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1MHz | -- | 66 | -- | pF |
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=4A | -- | 6.6 | -- | nC |
| Gate Source Charge | Qgs | VDS=10V, VGS=4.5V, ID=4A | -- | 0.4 | -- | nC |
| Gate Drain Charge | Qgd | VDS=10V, VGS=4.5V, ID=4A | -- | 2 | -- | nC |
| Turn on Delay Time | td(on) | VDS=10V, VGS=4.5V, ID=1A, RG=3.3 | -- | 4.1 | -- | ns |
| Turn on Rise Time | tr | VDS=10V, VGS=4.5V, ID=1A, RG=3.3 | -- | 11.6 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=10V, VGS=4.5V, ID=1A, RG=3.3 | -- | 24 | -- | ns |
| Turn Off Fall Time | tf | VDS=10V, VGS=4.5V, ID=1A, RG=3.3 | -- | 7.6 | -- | ns |
| Source drain current (Body Diode) | ISD | -- | -- | -- | 0.2 | A |
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | -- | 1.2 | -- | V |
2411211951_MDD-Microdiode-Semiconductor-MDD2300_C427387.pdf
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