Dual N Channel MOSFET MCC SIL2322A TP with UL 94 V0 Flammability and RoHS Compliant Lead Free Finish
Key Attributes
Model Number:
SIL2322A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
30mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
550mV
Reverse Transfer Capacitance (Crss@Vds):
60pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
500pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SIL2322A-TP
Package:
SOT-23-6L
Product Description
Product Overview
The SIL2322A is a Dual N-Channel MOSFET from MCCSEMI, designed with a high-density cell structure for extremely low RDS(ON). This rugged and reliable component is suitable for various applications and meets UL 94 V-0 flammability rating. It is Moisture Sensitivity Level 1 compliant and available in Halogen Free options upon request. The device is Lead Free Finish/RoHS Compliant.
Product Attributes
- Brand: MCCSEMI
- Model: SIL2322A
- Type: Dual N-Channel MOSFET
- Package: SOT23-6L
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Certifications: RoHS Compliant (P Suffix), Halogen Free Available (-HF Suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | 1.25 | A | |||
| Pulsed Drain Current | IDM | (Note 2) | A | |||
| Total Power Dissipation | PD | (Note 1) | 1.25 | W | ||
| Operating Junction Temperature Range | -55 | 150 | °C | |||
| Storage Temperature Range | -55 | 150 | °C | |||
| Maximum Thermal Resistance | Junction to Ambient (Note 1) | 100 | °C/W | |||
| Electrical Characteristics @ 25°C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=10µA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V, VGS =0V | 1 | µA | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=50µA | 0.55 | 1.25 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=3.6A | 20 | 30 | mΩ | |
| VGS=2.5V, ID=3.1A | 30 | 40 | mΩ | |||
| Forward Tranconductance | gFS | VDS=5V, ID=3.6A | 8.5 | S | ||
| Dynamic Characteristics (Note 4) | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f =1MHz | 500 | pF | ||
| Output Capacitance | Coss | 100 | pF | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-On Delay Time | td(on) | VGS=4.5V,VDD=10V,ID=3.6A, RGEN=6Ω | 23 | 45 | ns | |
| Turn-On Rise Time | tr | 11 | 30 | ns | ||
| Turn-Off Delay Time | td(off) | 34 | 70 | ns | ||
| Turn-Off Fall Time | tf | 36 | 70 | ns | ||
| Total Gate Charge | Qg | VDS=10V, ID=3.6A | 6 | 10 | nC | |
| Gate-Source Charge | Qgs | 1.4 | nC | |||
| Gate-Drain Charge | Qgd | 1.8 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Current | IS | 3 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=3A (Note 3) | 1.2 | V | ||
| Dimensions (INCHES / MM) | ||||||
| A | 0.012 / 0.30 | 0.020 / 0.50 | ||||
| B | 0.051 / 1.30 | 0.070 / 1.80 | ||||
| C | 0.087 / 2.20 | 0.126 / 3.20 | ||||
| D | 0.106 / 2.70 | 0.122 / 3.10 | ||||
| G | 0.037 / 0.95 | TYP. | ||||
| H | 0.074 / 1.90 | TYP. | ||||
| J | 0.002 / 0.05 | 0.006 / 0.15 | ||||
| K | 0.030 / 0.75 | 0.051 / 1.30 | ||||
| L | 0.012 / 0.30 | 0.024 / 0.60 | ||||
| M | 0.003 / 0.08 | 0.008 / 0.22 | ||||
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SIL2322A | Tape&Reel: 3Kpcs/Reel | -TP |
| (Add -HF for Halogen Free) |
2008182204_MCC-SIL2322A-TP_C725544.pdf
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