MDD Microdiode Semiconductor MDD4N60D N Channel MOSFET 600V Voltage Rating for Power Supply Circuits
Key Attributes
Model Number:
MDD4N60D
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
Half-Bridge
Current - Continuous Drain(Id):
4A
RDS(on):
1.75Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
100W
Output Capacitance(Coss):
61pF
Input Capacitance(Ciss):
600pF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
MDD4N60D
Package:
TO-252
Product Description
Product Overview
The MDD4N60D is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It offers ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Product Line: MDD4N60D
- Type: N-Channel Enhancement Mode MOSFET
- Voltage Rating: 600V
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | VDS | 600 | V | |||
| ID (Tc=25) | 4 | A | ||||
| RDS(on),typ | VGS=10V | 1.75 | ||||
| Qg,typ | 12 | nC | ||||
| Application | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies | |||||
| Absolute Maximum Ratings | VDS | 600 | V | |||
| VGS | 30 | V | ||||
| ID | Tc=25 | 4 | A | |||
| PD | 100 | W | ||||
| TJ | 150 | |||||
| Tstg | -55 | ~ | 150 | |||
| IDM | Pulsed Drain Current(Note 1) | 16 | A | |||
| EAS | Avalanche Energy Single Pulsed(Note 2) | 134 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5 | V/ns | |||
| Thermal Characteristics | RJC | Thermal resistance, Junction-to-case | 1.2 | C/W | ||
| RJA | Thermal resistance, Junction-to-ambient | 32.8 | C/W | |||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage VGS=0V, ID=250A | 600 | V | ||
| IGSS | Gate-Source Leakage Current VGS=30V, VDS=0V | 100 | nA | |||
| IDSS | Drain-Source Leakage Current VDS=600V, VGS=0V | 1 | uA | |||
| VGS(TH) | Gate Threshold Voltage VDS=VGS, ID=250A | 2.0 | 4.0 | V | ||
| RDS(ON) | Drain-Source On-State Resistance VGS=10V, ID=2A | 1.75 | 2.5 | |||
| Dynamic Electrical Characteristics | Ciss | Input Capacitance VDS=25V, VGS=0V, f=1MHz | 600 | pF | ||
| Coss | Output Capacitance | 61 | pF | |||
| Crss | Reverse Transfer Capacitance | 10 | pF | |||
| Gate Charge | Qg | Total Gate Charge VDS=300V, ID=2A, VGS=10V | 12 | nC | ||
| Qgs | Gate Source Charge | 3.2 | nC | |||
| Qgd | Gate Drain Charge | 4.4 | nC | |||
| Switching Characteristics | td(on) | Turn on Delay Time VDS=300V, ID=2A, RG=24 | 12 | ns | ||
| tr | Turn on Rise Time | 18 | ns | |||
| td(off) | Turn Off Delay Time | 49 | ns | |||
| tf | Turn Off Fall Time | 27 | ns | |||
| Source Drain Diode Characteristics | ISD | Source drain current(Body Diode) | 4 | A | ||
| VSD | Drain-Source Diode Forward Voltage IS=4A, VGS=0V | 1.2 | V | |||
| ISM | Max Pulsed Current | 16 | A | |||
| Body Diode Characteristics | trr | Body Diode Reverse Recovery Time VR=400V, IF=4A, di/dt =100A/s | 0.8 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | 290 | uC | |||
2507221720_MDD-Microdiode-Semiconductor-MDD4N60D_C49382866.pdf
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