Enhanced Avalanche Energy Minos MPT035N08 85V N Channel Power MOSFET for Battery Management Systems
Key Attributes
Model Number:
MPT035N08
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
185A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
16pF@42.5V
Number:
1 N-channel
Input Capacitance(Ciss):
6.234nF@42.5V
Pd - Power Dissipation:
208.3W
Gate Charge(Qg):
124nC@10V
Mfr. Part #:
MPT035N08
Package:
TO-220
Product Description
Product Description
The MPT035N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @VGS=10V (m) | ID @TC=25C (A) | EAS (mJ) | PD (W) |
| MPT035N08-P | TO-220 | 85 | <4 (Typ:3) | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 |
| MPT035N08-S | TO-263 | 85 | <4 (Typ:3) | 185 (Silicon Limited) / 120 (Package Limited) | 240.2 | 208.3 |
2410122024_Minos-MPT035N08_C5240681.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
