Power MOSFET Minos IRF740 Silicon N Channel Device Offering Low On Resistance and High Current Capability
Key Attributes
Model Number:
IRF740
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
10A
RDS(on):
500mΩ@10V
Operating Temperature -:
-55℃~+175℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.162nF@25V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
IRF740
Package:
TO-220
Product Description
Product Overview
The IRF740 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers, offering low ON resistance and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: www.mns-kx.com
- Origin: Shenzhen Minos (implied by contact information)
- Material: Silicon N-Channel (implied by product type)
- Certifications: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Drain-to-Source Breakdown Voltage (VDS) | 400 | V | |||
| Drain Current (continuous) | Tc=25 | 10 | A | ||
| Drain Current (pulsed) (IDM) | 40 | A | |||
| Gate to Source Voltage (VGS) | +/-30 | V | |||
| Total Dissipation (Ptot) | Tc=25 | 100 | W | ||
| Max. Operating Junction Temperature (Tj) | 175 | ||||
| Single Pulse Avalanche Energy (EAS) | 424 | mJ | |||
| Drain-source Voltage (VDS) | VGS =0V, ID=250A | 400 | V | ||
| Static Drain-to-Source on-Resistance (RDS(on)) | VGS =10V, ID=5A | 0.4 | 0.50 | ||
| Gated Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Drain to Source leakage Current (IDSS) | VDS=400V, VGS = 0V | 1.0 | A | ||
| Gated Body Foward Leakage (IGSS(F)) | VGS = +30V | 100 | nA | ||
| Gated Body Reverse Leakage (IGSS(R)) | VGS= -30V | -100 | nA | ||
| Input Capacitance (Ciss) | VGS =0V, VDS=25V, f=1.0MHZ | 1162 | pF | ||
| Output Capacitance (Coss) | VGS =0V, VDS=25V, f=1.0MHZ | 160 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS =0V, VDS=25V, f=1.0MHZ | 17 | pF | ||
| Turn-on Delay Time (td(on)) | VDD=200V,ID=10A, RG=10 | 16.5 | nS | ||
| Turn-on Rise Time (tr) | VDD=200V,ID=10A, RG=10 | 20.8 | nS | ||
| Turn-off Delay Time (td(off)) | VDD=200V,ID=10A, RG=10 | 46.9 | nS | ||
| Turn-off Fall Time (tf) | VDD=200V,ID=10A, RG=10 | 18.5 | nS | ||
| Total Gate Charge (Qg) | VDS=320V ID=10A VGS=10V | 32 | nC | ||
| Gate-Source Charge (Qgs) | VDS=320V ID=10A VGS=10V | 5 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=320V ID=10A VGS=10V | 15 | nC | ||
| S-D Current (Body Diode) (ISD) | 10 | A | |||
| Pulsed S-D Current (Body Diode) (ISDM) | 40 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V, IDS=18A | 1.5 | V | ||
| Reverse Recovery Time (trr) | TJ=25,IF=18A di/dt=100A/us | 216 | nS | ||
| Reverse Recovery Charge (Qrr) | TJ=25,IF=18A di/dt=100A/us | 1640 | C | ||
| Junction-to-Case Thermal Resistance (RJC) | 1.5 | /W |
2411220027_Minos-IRF740_C2980280.pdf
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