86--136 6733 2386
quality MCC MCAC20N15 TP Power MOSFET N Channel Type with RoHS Compliance and UL 94 V 0 Flame Retardant Epoxy factory
quality MCC MCAC20N15 TP Power MOSFET N Channel Type with RoHS Compliance and UL 94 V 0 Flame Retardant Epoxy factory

MCC MCAC20N15 TP Power MOSFET N Channel Type with RoHS Compliance and UL 94 V 0 Flame Retardant Epoxy

Key Attributes
Model Number: MCAC20N15-TP
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
42mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
30pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.233nF@75V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
MCAC20N15-TP
Package:
DFN-8(5.7x5.1)
Product Description

Product Overview

The MCAC20N15 is an N-channel MOSFET featuring an advanced trench cell design for low thermal resistance. It is halogen-free, with an epoxy meeting UL 94 V-0 flammability rating, and is RoHS compliant. This MOSFET operates within a junction temperature range of -55C to +150C and has a storage temperature range of -55C to +150C. Its low thermal resistance of 3.5C/W (Junction to Case) makes it suitable for various power applications.

Product Attributes

  • Brand: MCC SEMI
  • Model: MCAC20N15
  • Channel Type: N-Channel
  • RoHS Compliant: Yes
  • Flammability Rating: UL 94 V-0
  • Halogen Free: Yes

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current ID 68 A
Pulsed Drain Current IDM (2) 35 A
Total Power Dissipation PD (1) 68 W
Thermal Resistance Junction to Case (1) 3.5 °C/W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 150 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±25V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V 1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2 4 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 42 51 mΩ
Drain-Source On-Resistance RDS(on) VGS=6V, ID=10A 49 64 mΩ
Continuous Body Diode Current IS 20 A
Diode Forward Voltage VSD VGS=0V, IS=20A 1.3 V
Reverse Recovery Time trr IS=7A,di/dt=100A/μs 63 ns
Reverse Recovery Charge Qrr VDS=75V,VGS=10V,ID=20A 176 nC
Input Capacitance Ciss VDS=75V,VGS=0V,f=1MHz 1233 pF
Output Capacitance Coss VDS=75V,VGS=0V,f=1MHz 80 pF
Reverse Transfer Capacitance Crss VDS=75V,VGS=0V,f=1MHz 30 pF
Total Gate Charge Qg VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 26 nC
Gate-Source Charge Qgs VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 8.3 nC
Gate-Drain Charge Qg VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 8.2 nC
Turn-On Delay Time td(on) VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 10 ns
Turn-On Rise Time tr VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 34 ns
Turn-Off Delay Time td(off) VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 17 ns
Turn-Off Fall Time tf VDS=75V, VGEN=10V, RG=4.5Ω, RL=3.75Ω, IDS=20A 23 ns

Dimensions (Inches/MM):

DIM INCHES MM NOTE
A 0.031 - 0.047 0.80 - 1.20
B 0.193 - 0.222 4.90 - 5.64
C 0.232 - 0.250 5.90 - 6.35
D 0.148 - 0.167 3.75 - 4.25
E 0.126 - 0.154 3.20 - 3.92
F 0.189 - 0.213 4.80 - 5.40
G 0.222 - 0.239 5.65 - 6.06
H 0.045 - 0.059 1.15 - 1.50
K 0.012 - 0.020 0.30 - 0.50
J 0.046 - 0.054 1.17 - 1.37
L 0.012 - 0.028 0.30 - 0.71
M 0.016 - 0.028 0.40 - 0.71
N 0.010 0.254 TYP.

Ordering Information:

Device Packing Part Number
Tape&Reel: 5Kpcs/Reel -TP

2008182105_MCC-MCAC20N15-TP_C725262.pdf

Related Products
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic factory
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.