Silicon n channel enhanced mosfet Minos IRF3710 designed for power supply and switching applications
Key Attributes
Model Number:
IRF3710
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
1 N-channel
Output Capacitance(Coss):
610pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
IRF3710
Package:
TO-220
Product Description
Product Description
The IRF3710 is a silicon N-Channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for Switch Mode Power Supplies (SMPS), high-speed switching applications, and general-purpose uses.
Product Attributes
- Brand: www.mns-kx.com
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel Enhanced MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit | |
| Absolute Maximum Ratings | VDS | VGS = 0V | 100 | V | |
| ID | TC = 25 | 70 | A | ||
| IDM | Figure 6 | -- | A | ||
| VGSS | -- | ±20 | V | ||
| EAS | IAS= 30A, VDD= 50V, RG= 25 , Starting TJ= 25 | 1943 | mJ | ||
| Thermal Resistance | RthJC | TO-220 | 0.75 | /W | |
| RthJA | TO-220 | 62 | /W | ||
| PD | TC= 25 | 200 | W | ||
| Specifications (TJ = 25C) | V(BR)DSS | VGS= 0V, ID = 250A | 100 | V | |
| IDSS | VDS = 100V, VGS = 0V, TJ = 25 | -- | 1 µA | ||
| IGSS | VGS = ±20V,VDS=0V | -- | ±100 | nA | |
| VGS(th) | VDS = VGS, ID= 250µA | 2.0 -- 4.0 | V | ||
| RDS(on) | VGS = 10V, ID = 28A | -- 17 21 | mΩ | ||
| gfs | VDS = 10V, ID = 28A | 85 | S | ||
| Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- 2700 | pF | ||
| Dynamic | Coss | -- | -- 610 | pF | |
| Crss | -- | -- 260 | pF | ||
| Qg | VDD=50V, ID= 28A, VGS= 0 to 10V | -- 60 | nC | ||
| td(on) | VDD = 50V, ID =28A, VGS= 10V RG = 2.5 | -- 20 | ns | ||
| Body Diode Characteristics | IS | TC= 25 | -- | 70 | A |
| ISM | -- | -- 230 | A | ||
| VSD | TJ= 25, ISD= 28A, VGS = 0V | -- -- 1.5 | V | ||
| trr | VGS = 0V,IS = 28A, diF/dt =100A /μs | -- 195 | ns |
2410010300_Minos-IRF3710_C33129605.pdf
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