MDD Microdiode Semiconductor BSS138W MOSFET with Excellent ESD Performance and Fast Switching Speeds
Key Attributes
Model Number:
BSS138W
Product Custom Attributes
Mfr. Part #:
BSS138W
Package:
SOT-323
Product Description
Product Overview
The BSS138W is a 60V N-channel enhancement mode MOSFET designed with MDD's unique device technology. It offers low on-resistance (RDS(on)), fast switching speeds, and good ESD performance. This MOSFET is suitable for load switching in portable devices, battery-powered systems, DC-DC converters, and LCD display inverters.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Origin: Craftsman-Made Consciention Chip
- Certifications: ESD rating of class 2 per human body model (JESD22-A114-B)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| 1. Description | ||||||
| N-Channel Enhancement Mode MOSFET | ||||||
| 2. Features | ||||||
| Exceptional on-resistance and maximum DC current capability | VDS=60V, ID=0.3A, RDS(on)typ=1.8 @ VGS=10V | |||||
| 3. Application | ||||||
| Load Switch for Portable Devices | ||||||
| Battery Powered System | ||||||
| DC-DC converter | ||||||
| LCD Display inverter | ||||||
| 4. Absolute Maximum Ratings (TA=25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current (Note 1) | ID | TA=25C | 0.3 | A | ||
| Pulsed Drain Current (Note 1) | IDM | TA=25C | 1.2 | A | ||
| Power Dissipation | PD | TA=25C | 0.3 | W | ||
| Thermal Resistance, Junction-Ambient (Note 2) | RJA | Surface Mounted on FR-4 Board | 500 | C/W | ||
| Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | ||
| 5. Pinning information | ||||||
| Gate | G | |||||
| Source | S | |||||
| Drain | D | |||||
| 6. Electrical Characteristics (TA=25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 0.7 | 1.0 | 1.5 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | -10/10 | A | ||
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS=0V, TJ=150C | 10 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.3A | 1.8 | 2.2 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=0.2A | 2.0 | 3.0 | ||
| 7. Dynamic Electrical Characteristics (TA=25C unless otherwise specified) | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1.0MHz | 25 | pF | ||
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1.0MHz | 7 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1.0MHz | 3 | pF | ||
| Total Gate Charge | Qg | VDS=30V, VGS=4.5V, ID=0.3A | 1.8 | nC | ||
| Gate Source Charge | Qgs | VDS=30V, VGS=4.5V, ID=0.3A | 0.5 | nC | ||
| Gate Drain Charge | Qgd | VDS=30V, VGS=4.5V, ID=0.3A | 0.3 | nC | ||
| 8. Switching Characteristics (ID=0.3A, RG=2.3, VGS=10V, VDS=30V) | ||||||
| Turn on Delay Time | td(on) | 4 | ns | |||
| Turn on Rise Time | tr | 9 | ns | |||
| Turn Off Fall Time | tf | 7 | ns | |||
| Turn Off Delay Time | td(off) | 16 | ns | |||
| 9. Source Drain Diode Characteristics | ||||||
| Source drain current(Body Diode) | IS | VGS=0V | 0.3 | A | ||
| Drain-Source Diode Forward Voltage | VSD | IS=0.3A, VGS=0V | 0.8 | 1.2 | V | |
2512021845_MDD-Microdiode-Semiconductor-BSS138W_C53069222.pdf
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