MDD Microdiode Semiconductor MDD10N60F 600V N Channel MOSFET for electronic ballast and UPS systems
Key Attributes
Model Number:
MDD10N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.62nF
Output Capacitance(Coss):
138.2pF
Gate Charge(Qg):
31.4nC@10V
Mfr. Part #:
MDD10N60F
Package:
TO-220F
Product Description
Product Overview
The MDD10N60F is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for electronic ballasts, switched-mode power supplies, and UPS systems.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 10 | A | ||
| Power Dissipation | PD | TO-220F | 40 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~ | 150 | ||
| Pulsed Drain Current | IDM | (Note 1) | 40 | A | ||
| Avalanche Energy Single Pulsed | EAS | (Note 2) | 500 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | (Note 3) | 5 | V/ns | ||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-to-case | RJC | TO-220F | 3.13 | /W | ||
| Thermal resistance, Junction-to-ambient | RJA | TO-220F | 110 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 600 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | 1 µA | |||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 2.0 | 4.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A | 0.9 | Ω | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 1620 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 138.2 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 6.6 | pF | ||
| Total Gate Charge | Qg | VDS=480V, VGS=10V, ID=10A (Note1,2) | 31.4 | nC | ||
| Gate Source Charge | Qgs | VDS=480V, VGS=10V, ID=10A (Note1,2) | 8.3 | nC | ||
| Gate Drain Charge | Qgd | VDS=480V, VGS=10V, ID=10A (Note1,2) | 10.2 | nC | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=300V, ID=10A, RG=10Ω (Note1,2) | 15 | ns | ||
| Turn on Rise Time | tr | VDS=300V, ID=10A, RG=10Ω (Note1,2) | 32.6 | ns | ||
| Turn Off Delay Time | td(off) | VDS=300V, ID=10A, RG=10Ω (Note1,2) | 61.6 | ns | ||
| Turn Off Fall Time | tf | VDS=300V, ID=10A, RG=10Ω (Note1,2) | 14.5 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=10A, VGS=0V | 1.5 | V | ||
| Body Diode Reverse Recovery Time | trr | VR=300V, IF=10A, -diF/dt =100A/µs | 370 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | VR=300V, IF=10A, -diF/dt =100A/µs | 3.14 | µC | ||
2506181720_MDD-Microdiode-Semiconductor-MDD10N60F_C49230727.pdf
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