High voltage MOSFET Minos MD33N25 with 250 volt drain to source breakdown voltage and fast switching
Key Attributes
Model Number:
MD33N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
33A
RDS(on):
110mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
465pF
Pd - Power Dissipation:
198W
Input Capacitance(Ciss):
5.6nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MD33N25
Package:
TO-247
Product Description
Product Overview
The MD33N25 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for SMPS, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| Product Code | MD33N25 | ||
| Package | TO-247 | ||
| VDS | 250 | V | Drain-to-Source Voltage |
| ID | 33 | A | Continuous Drain Current |
| RDS(ON).Typ | 0.1 | Drain-to-Source On-Resistance (Typical) | |
| Features | Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability | ||
| Applications | High frequency switching mode power supply | ||
| VDSS | 250 | V | Drain-to-Source Breakdown Voltage |
| IDM | 132 | A | Pulsed Drain Current |
| VGS | 30 | V | Gate-to-Source Voltage |
| EAS | 1170 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt |
| PD (TO-247) | 198 | W | Power Dissipation |
| PD (TO-220F) | 62 | W | Power Dissipation |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| RJC (TO-247) | 0.63 | /W | Junction-to-Case Thermal Resistance |
| RJA (TO-247) | 62.5 | /W | Junction-to-Ambient Thermal Resistance |
| IDSS | 1 | A | Drain to Source Leakage Current (VDS=250V, VGS=0V, Tj=25) |
| IGSS(F) | 100 | nA | Gate to Source Forward Leakage (VGS=+30V) |
| IGSS(R) | -100 | nA | Gate to Source Reverse Leakage (VGS=-30V) |
| RDS(ON) | 0.15 | Drain-to-Source On-Resistance (Max) | |
| VGS(TH) | 4.0 | V | Gate Threshold Voltage (Max) |
| gfs | 5.1 | S | Forward Transconductance (Typ) |
| Ciss | 5600 | PF | Input Capacitance (Typ) |
| Coss | 465 | PF | Output Capacitance (Typ) |
| Crss | 21 | PF | Reverse Transfer Capacitance (Typ) |
| td(ON) | 230 | ns | Turn-on Delay Time (Typ) |
| tr | 75 | ns | Rise Time (Typ) |
| td(OFF) | 120 | ns | Turn-Off Delay Time (Typ) |
| tf | 36 | ns | Fall Time (Typ) |
| Qg | 40 | nC | Total Gate Charge (Typ) |
| Qgs | 14 | nC | Gate to Source Charge (Typ) |
| Qgd | 11 | nC | Gate to Drain (Miller)Charge (Typ) |
| IS | 33 | A | Continuous Source Current (Body Diode) |
| ISM | 132 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.2 | V | Diode Forward Voltage (Typ) |
| Trr | 240 | ns | Reverse Recovery Time (Typ) |
| Qrr | 2000 | nC | Reverse Recovery Charge (Typ) |
| Irrm | 35.3 | A | Reverse Recovery Current (Typ) |
2410281531_Minos-MD33N25_C2980283.pdf
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