Microdiode Semiconductor SS8050 NPN Transistor Plastic Encapsulated General Purpose SOT23 Package
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
SS8050 Transistor
The SS8050 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It is complementary to the SS8550 transistor.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Marking: Y1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=100mA | 120 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB=80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB=80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC=50mA f=30MHz | 100 | MHz | ||
| Collector cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Thermal Resistance | RJA | From Junction To Ambient | 417 | /W | ||
| DC current gain (Rank L) | hFE(2) | VCE=1V, IC=800mA | 120 | 200 | ||
| DC current gain (Rank H) | hFE(2) | VCE=1V, IC=800mA | 200 | 350 | ||
| DC current gain (Rank J) | hFE(2) | VCE=1V, IC=800mA | 300 | 400 | ||
| Base-emitter voltage | VBE | VCE=1V, IC=10mA | 1.0 | V | ||
| Collector output capacitance | Cob | VCB=10V, IE=0mA f=1MHz | 20 | pF |
2411211951_MDD-Microdiode-Semiconductor-SS8050_C431710.pdf
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