Microdiode Semiconductor SS8050 NPN Transistor Plastic Encapsulated General Purpose SOT23 Package

Key Attributes
Model Number: SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description

SS8050 Transistor

The SS8050 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It is complementary to the SS8550 transistor.

Product Attributes

  • Brand: Microdiode
  • Package Type: SOT-23
  • Marking: Y1

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO5V
Collector Current-ContinuousIC1.5A
Collector Power DissipationPC0.3W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC=0.1mA,IB=025V
Emitter-base breakdown voltageV(BR)EBOIE=100A,IC=05V
Collector cut-off currentICBOVCB=40V, IE=00.1A
Emitter cut-off currentIEBOVEB=5V, IC=00.1A
DC current gainhFE(1)VCE=1V, IC=100mA120400
Collector-emitter saturation voltageVCE(sat)IC=800mA, IB=80mA0.5V
Base-emitter saturation voltageVBE(sat)IC=800mA, IB=80mA1.2V
Transition frequencyfTVCE=10V, IC=50mA f=30MHz100MHz
Collector cut-off currentICEOVCE=20V, IE=00.1A
Thermal ResistanceRJAFrom Junction To Ambient417/W
DC current gain (Rank L)hFE(2)VCE=1V, IC=800mA120200
DC current gain (Rank H)hFE(2)VCE=1V, IC=800mA200350
DC current gain (Rank J)hFE(2)VCE=1V, IC=800mA300400
Base-emitter voltageVBEVCE=1V, IC=10mA1.0V
Collector output capacitanceCobVCB=10V, IE=0mA f=1MHz20pF

2411211951_MDD-Microdiode-Semiconductor-SS8050_C431710.pdf

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