MDD Microdiode Semiconductor MDDG2C065R060K3 3rd Generation SiC MOSFET 650V N Channel for Power Conversion
Key Attributes
Model Number:
MDDG2C065R060K3
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
29A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
-
Mfr. Part #:
MDDG2C065R060K3
Package:
TO-247-3L
Product Description
Product Overview
The MDDG2C065R060K3 is a 650V N-Channel SiC Power MOSFET featuring 3rd Generation SiC MOSFET technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET is designed to enhance system efficiency, reduce cooling requirements, increase power density, and enable higher system switching frequencies. It is easy to parallel and simple to drive, making it suitable for advanced hard-switching PFC topologies like Totem-Pole.
Product Attributes
- Technology: 3rd Generation SiC MOSFET
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Test Conditions | Note |
| Maximum Ratings | |||||||
| Drain - Source Voltage | VDSS | V | 650 | TC = 25 C | |||
| Gate - Source voltage (Under transient events < 100 ns) | VGS | V | -8 | +19 | |||
| Continuous Drain Current | ID | A | 20 | 29 | VGS = 15 V, TC = 100C | Fig. 19 | |
| Continuous Drain Current | ID | A | 29 | VGS = 15 V, TC = 25C | Fig. 29 | ||
| Pulsed Drain Current | ID(pulse) | A | 99 | Pulse width tP limited by TJmax | |||
| Power Dissipation | PD | W | 150 | TC=25C, TJ = 175 C | Fig. 20 | ||
| Operating Junction and Storage Temperature | TJ , Tstg | C | -40 | +175 | |||
| Solder Temperature, 1.6mm (0.063) from case for 10s | TL | C | 260 | ||||
| Mounting Torque, (M3 or 6-32 screw) | Md | Nm lbf-in | 1 8.8 | ||||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | V | 650 | VGS = 0 V, ID = 100 A | |||
| Gate-Source Recommended Turn-On Voltage | VGSon | V | Fig. 29 | ||||
| Gate-Source Recommended Turn-Off Voltage | VGSoff | V | |||||
| Gate Threshold Voltage | VGS(th) | V | 1.8 | 2.3 | 3.6 | VDS = VGS, ID = 5 mA | Fig. 11 |
| Gate Threshold Voltage | VGS(th) | V | 1.9 | VDS = VGS, ID = 5 mA, TJ = 175C | |||
| Zero Gate Voltage Drain Current | IDSS | A | 1 | 50 | VDS = 650 V, VGS = 0 V | ||
| Gate-Source Leakage Current | IGSS | nA | 10 | 250 | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | m | 42 | 60 | 79 | VGS = 15 V, ID = 13.2 A | Fig. 4, 5,6 |
| Drain-Source On-State Resistance | RDS(on) | m | 80 | VGS = 15 V, ID = 13.2 A, TJ = 175C | |||
| Transconductance | gfs | S | 10 | VDS= 20 V, IDS= 13.2 A | Fig. 7 | ||
| Transconductance | gfs | S | 9 | VDS= 20 V, IDS= 13.2 A, TJ = 175C | |||
| Input Capacitance | Ciss | pF | 1020 | VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Output Capacitance | Coss | pF | 80 | ||||
| Reverse Transfer Capacitance | Crss | pF | 9 | ||||
| Effective Output Capacitance (Energy Related) | Co(er) | pF | 95 | VGS = 0 V, VDS = 0V to 400 V | Note 1 | ||
| Effective Output Capacitance (Time Related) | Co(tr) | pF | 132 | ||||
| Stored Energy | Eoss | J | 15 | VDS = 600 V, 1 MHz | Fig. 16 | ||
| Turn-On Switching Energy (Body Diode) | EON | J | 110 | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = Internal Body Diode of MOSFET | Fig. 25 | ||
| Turn Off Switching Energy (Body Diode) | EOFF | J | 22 | ||||
| Turn-On Switching Energy (External SiC Diode) | EON | J | 63 | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = External SiC Diode | Fig. 25 | ||
| Turn Off Switching Energy (External SiC Diode) | EOFF | J | 28 | ||||
| Turn-On Delay Time | td(on) | ns | 9 | VDD = 400 V, VGS = -4 V/15 V ID = 13.2 A, RG(ext) = 2.5 , L= 135 H Timing relative to VDS Inductive load | Fig. 26 | ||
| Rise Time | tr | ns | 20 | ||||
| Turn-Off Delay Time | td(off) | ns | 17 | ||||
| Fall Time | tf | ns | 8 | ||||
| Internal Gate Resistance | RG(int) | 3 | f = 1 MHz, VAC = 25 mV | ||||
| Gate to Source Charge | Qgs | nC | 14 | VDS = 400 V, VGS = -4 V/15 V ID = 13.2 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Gate to Drain Charge | Qgd | nC | 14 | ||||
| Total Gate Charge | Qg | nC | 46 | ||||
| Reverse Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | V | 4.8 | 5.1 | VGS = -4 V, ISD = 6.6 A, TJ = 25 C | Fig. 8, 9, 10 | |
| Diode Forward Voltage | VSD | V | VGS = -4 V, ISD = 6.6 A, TJ = 175 C | ||||
| Continuous Diode Forward Current | IS | A | 23 | VGS = -4 V, TC = 25C | |||
| Diode pulse Current | IS, pulse | A | 99 | VGS = -4 V, pulse width tP limited by TJmax | |||
| Reverse Recover time | trr | ns | 20 | VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 1200 A/s, TJ = 175 C | |||
| Reverse Recovery Charge | Qrr | nC | 190 | ||||
| Peak Reverse Recovery Current | Irrm | A | 16 | ||||
| Reverse Recover time | trr | ns | 29 | VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 750 A/s, TJ = 175 C | |||
| Reverse Recovery Charge | Qrr | nC | 181 | ||||
| Peak Reverse Recovery Current | Irrm | A | 9 | ||||
| Thermal Characteristics | |||||||
| Thermal Resistance from Junction to Case | RJC | C/W | 0.99 | Fig. 21 | |||
| Thermal Resistance From Junction to Ambient | RJA | C/W | 40 | ||||
Applications
- EV charging
- Server power supplies
- Solar PV inverters
- UPS
- DC/DC converters
Package
- TO-247-3L
2411121055_MDD-Microdiode-Semiconductor-MDDG2C065R060K3_C22370505.pdf
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