N Channel Power MOSFET Minos MPG15N10P 100V 15A 31W Tested for Avalanche Energy and Stability
Key Attributes
Model Number:
MPG15N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
680pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MPG15N10P
Package:
TO-220
Product Description
Product Overview
The MPG15N10P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower RDS(ON), a fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for heat dissipation. The device is 100% UIS and DVDS tested.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 15 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 40 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 31 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 21 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 4.8 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | 1 | µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 | nA | |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A (Note 3) | - | 80 | 90 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=5A (Note 3) | 90 | 115 | mΩ | |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 85 | - | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V, RGEN=2.5Ω (Note 4) | - | 10 | - | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=5A, VGS=10V, RGEN=2.5Ω (Note 4) | - | 7 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, ID=5A, VGS=10V, RGEN=2.5Ω (Note 4) | - | 34 | - | nS |
| Turn-Off Fall Time | tf | VDD=50V, ID=5A, VGS=10V, RGEN=2.5Ω (Note 4) | - | 9 | - | nS |
| Total Gate Charge | Qg | VDS=80V, ID=3A, VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | VDS=80V, ID=3A, VGS=10V | - | 4 | - | nC |
| Gate-Drain Charge | Qg d | VDS=80V, ID=3A, VGS=10V | - | 5 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2504301112_Minos-MPG15N10P_C7429905.pdf
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