AO3400-5.8A Microdiode Semiconductor N Channel MOSFET SOT 23 Package for Load Switching Applications
Key Attributes
Model Number:
AO3400-5.8A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
50mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Input Capacitance(Ciss):
635pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
10.5nC@15V
Mfr. Part #:
AO3400-5.8A
Package:
SOT-23
Product Description
Product Overview
The AO3400 is a SOT-23 packaged N-Channel Enhancement Mode Field Effect Transistor designed for load switching in portable devices and DC/DC converters. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET offers a 30V Drain-Source Breakdown Voltage and a continuous drain current of 5.8A.
Product Attributes
- Brand: Microdiode
- Package: SOT-23
- Marking: A07T
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25 | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70 | 4.6 | A | ||
| Pulsed Drain Current | IDM | (note 1) | 23 | A | ||
| Maximum Power Dissipation | PD | TA=25 (note 2) | 1.5 | W | ||
| Maximum Power Dissipation | PD | TA=70 (note 2) | 0.9 | W | ||
| Operating Junction and Storage Temperature Range | TJ | 150 | ||||
| Thermal Resistance Junction-Ambient | RJA | (note 2) | 100 | /W | ||
| Storage Temperature Range | Tstg | -50 | 150 | |||
| Electrical Characteristics (Tj=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | uA | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V,Tj=125 | 100 | uA | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5.8A (note 3) | 27 | 32 | m | |
| Drain-source on-resistance | RDS(on) | VGS =3.3V, ID =4A (note 3) | 29 | 45 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID=2A (note 3) | 35 | 50 | m | |
| Forward transconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 0.5 | 1.2 | V | |
| Dynamic Characteristics (note 4) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 635 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 135 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 40 | pF | ||
| Total Gate Charge | Qg | VDD=15V, ID=5A, RG=3.3, VGS=4.5V | 10.5 | nC | ||
| Gate Source Charge | Qgs | VDD=15V, ID=5A, RG=3.3, VGS=4.5V | 1.6 | nC | ||
| Gate Drain Charge | Qgd | VDD=15V, ID=5A, RG=3.3, VGS=4.5V | 2.7 | nC | ||
| Switching Characteristics (note 4) | ||||||
| Turn-on delay time | td(on) | VDS=15V ID=5A, VGS=4.5V | 7.5 | ns | ||
| Turn-on rise time | tr | VDS=15V ID=5A, VGS=4.5V | 18 | ns | ||
| Turn-off delay time | td(off) | VDS=15V ID=5A, VGS=4.5V | 36 | ns | ||
| Turn-off fall time | tf | VDS=15V ID=5A, VGS=4.5V | 5 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Source drain current(Body Diode) | ISD | TA=25 | 1.5 | A | ||
| Diode forward voltage | VSD | IS=3A,VGS=0V (note 3) | 0.82 | 1.2 | V | |
2411121106_MDD-Microdiode-Semiconductor-AO3400-5-8A_C3280110.pdf
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