Power MOSFET Minos MPF10N65 featuring low gate charge and high voltage rating for SMPS applications
Key Attributes
Model Number:
MPF10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
106pF
Input Capacitance(Ciss):
1.11nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MPF10N65
Package:
TO-220F
Product Description
Product Overview
The MPF10N65 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC). Key features include high voltage and current ratings, low on-resistance, fast switching, and improved dv/dt capability.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China ()
- Material: Silicon N-Channel Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source Breakdown Voltage | BVDSS | VGS=0V,ID=250A | 650 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250A | 3.0 | 4.0 | V | |
| Drain-source Leakage Current | IDSS | VDS=650V,VGS=0V,Tj=25 | 1 | A | ||
| Drain-source Leakage Current | IDSS | VDS=520V,VGS=0V,Tj=125 | 100 | A | ||
| Gate-body Leakage Current(VDS=0) | IGSS | VGS=30V | 100 | nA | ||
| Static Drain-source On Resistance | RDS(ON) | VGS=10V,ID=4.0A | 0.6 | 0.7 | ||
| Input Capacitance | Ciss | VGS=0V,VDS=25V, F=1.0MHZ | 1110 | pF | ||
| Onput Capacitance | Coss | VGS=0V,VDS=25V, F=1.0MHZ | 106 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V,VDS=25V, F=1.0MHZ | 13 | pF | ||
| Turn-On Delay Time | Td(on) | VDD=325V, ID=10A RG=25 | 39 | ns | ||
| Turn-On Rise Time | Tr | VDD=325V, ID=10A RG=25 | 10 | ns | ||
| Turn-Off Delay Time | Td(o) | VDD=325V, ID=10A RG=25 | 152 | ns | ||
| Turn-Off Fall Time | Tf | VDD=325V, ID=10A RG=25 | 42 | ns | ||
| Total Gate Charge | Qg | ID=10A, VDS=520V VGS=10V | 37 | nC | ||
| Gate-to-Source Charge | Qgs | ID=10A, VDS=520V VGS=10V | 5 | nC | ||
| Gate-to-Drain Charge | Qg | ID=10A, VDS=520V VGS=10V | 24 | nC | ||
| Continuous Diode Forward Current | Is | 10 | A | |||
| Diode Forward Voltage | VSD | Tj=25,Is=12.0A VGS=,0V | 1.4 | V | ||
| Reverse Recovery Time | Trr | Tj=25,If=12.0A di/dt=100A/S | 601 | ns | ||
| Reverse Recovery Charge | Qrr | Tj=25,If=12.0A di/dt=100A/S | 2.3 | uC |
Ordering Information
| Ordering Codes | Package | Product Code | Packing |
| TO-220F | MPF10N65 | Tube |
2410121956_Minos-MPF10N65_C5452755.pdf
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