N Channel MOSFET MCC MCG60N06YHE3 TP 60 Volt Device with AEC Q101 Qualification and Lead Free Finish
Key Attributes
Model Number:
MCG60N06YHE3-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.6mΩ@10V;6.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Input Capacitance(Ciss):
1.666nF
Output Capacitance(Coss):
500pF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
34.5nC@10V
Mfr. Part #:
MCG60N06YHE3-TP
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The MCG60N06YHE3 is a high-density N-Channel MOSFET featuring Split Gate Trench MOSFET Technology for ultra-low RDS(on). It is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, making it suitable for various industrial applications. The device offers excellent thermal performance with a low Junction to Case thermal resistance.
Product Attributes
- Brand: MCC
- Technology: Split Gate Trench MOSFET
- Certifications: AEC-Q101 Qualified
- Environmental: Halogen Free ("Green" Device), Lead Free Finish/RoHS Compliant
- Flammability Rating: Epoxy Meets UL 94 V-0
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 60 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 240 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 5) | 144 | mJ | ||
| Total Power Dissipation | PD | TC=25C | 60 | W | ||
| Operating Junction Temperature Range | -55 | +175 | C | |||
| Storage Temperature Range | -55 | +175 | C | |||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | 60 | C/W | ||
| Thermal Resistance Junction to Case | RJC | 2.5 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 4.6 | 6.0 | m | |
| RDS(on) | VGS=4.5V, ID=20A | 6.4 | 8.3 | m | ||
| Gate Resistance | Rg | F=1 MHz, Open drain | 1.6 | |||
| Continuous Body Diode Current | IS | 60 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 1.3 | V | ||
| Reverse Recovery Time | trr | IF=20A, dIF/dt=100A/s | 37 | ns | ||
| Reverse Recovery Charge | Qrr | 32 | nC | |||
| Input Capacitance | Ciss | VDS=30V,VGS=10V,f=1MHz | 1666 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | 500 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | 18 | pF | ||
| Total Gate Charge | Qg | VDD=30V, VGS=10V, IDS=10A,RGEN=3 | 34.5 | nC | ||
| Gate-Source Charge | Qgs | 4.6 | nC | |||
| Gate-Drain Charge | Qg | 9.2 | nC | |||
| Turn-On Delay Time | td(on) | 8.9 | ns | |||
| Turn-On Rise Time | tr | 10.6 | ns | |||
| Turn-Off Delay Time | td(off) | 29.5 | ns | |||
| Turn-Off Fall Time | tf | 12.4 | ns |
Dimensions (DFN3333)
| DIM | INCHES | MM |
|---|---|---|
| A | 0.126 - 0.130 | 3.20 - 3.30 |
| B | 0.126 - 0.130 | 3.20 - 3.30 |
| C | 0.030 - 0.033 | 0.75 - 0.85 |
| C1 | 0.007 - 0.009 | 0.18 - 0.22 |
| C2 | --- - 0.002 | --- - 0.05 |
| D | 0.071 - 0.079 | 1.80 - 2.00 |
| E | 0.087 - 0.098 | 2.20 - 2.50 |
| F | 0.010 - 0.014 | 0.25 - 0.35 |
| G | 0.012 - 0.016 | 0.30 - 0.40 |
| H | 0.016 - 0.020 | 0.40 - 0.50 |
| e | 0.024 - 0.028 | 0.60 - 0.70 |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCG60N06YHE3 | Tape&Reel: 5Kpcs/Reel | MCG60N06YHE3-TP |
2506301105_MCC-MCG60N06YHE3-TP_C26691506.pdf
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