MCC MCQ05P10Y TP P channel MOSFET with moisture sensitivity level 1 and UL 94 V 0 flammability rating

Key Attributes
Model Number: MCQ05P10Y-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.7pF@50V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.062nF@50V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
19nC@0V
Mfr. Part #:
MCQ05P10Y-TP
Package:
SOP-8
Product Description

Product Overview

The MCQ05P10Y is a P-CHANNEL MOSFET featuring Split Gate Trench MOSFET Technology and a High Density Cell Design for low RDS(ON). It is designed for various applications requiring efficient power switching. This device is Moisture Sensitivity Level 1, Halogen Free (Green Device), and meets UL 94 V-0 flammability rating. It is Lead Free and RoHS Compliant, operating within a junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Split Gate Trench MOSFET
  • Moisture Sensitivity Level: 1
  • Flammability Rating: UL 94 V-0
  • Compliance: Halogen Free (Green Device), Lead Free, RoHS Compliant
  • Package Type: SOP-8

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS V
Continuous Drain Current ID TA=25 -4.5 A
Total Power Dissipation PD W
Pulsed Drain Current IDM A
Single Pulsed Avalanche Energy EAS 56 mJ
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1.0 -1.8 -2.5 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-3A 83 110 m
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-2A 95 120 m
Continuous Body Diode Current IS -4.5 A
Diode Forward Voltage VSD VGS=0V, IS=-3A -1.3 V
Reverse Recovery Time trr VDS=-50V,VGS=-10V,ID=-5A 40 ns
Reverse Recovery Charge Qrr IS=-5A, dIF/dt=100A/s 80 nC
Input Capacitance Ciss VDS=-50V,VGS=0V,f=1MHz 1062 pF
Output Capacitance Coss VDS=-50V,VGS=0V,f=1MHz 112 pF
Reverse Transfer Capacitance Crss VDS=-50V,VGS=0V,f=1MHz 8.7 pF
Total Gate Charge Qg VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 19 nC
Gate-Source Charge Qgs VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 3 nC
Gate-Drain Charge Qgd VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 3.5 nC
Turn-On Delay Time td(on) VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 7.4 ns
Turn-On Rise Time tr VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 9.3 ns
Turn-Off Delay Time td(off) VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 58 ns
Turn-Off Fall Time tf VDD=-50V, VGS=-10V, RGEN=6, ID=-5A 19 ns
Gate Resistance Rg F=1 MHz, Open drain 9.8
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Ambient RJA (Steady-State)(Note2) 75 C/W
Thermal Resistance Junction to Lead RJL (Steady-State) 24 C/W

Dimensions (SOP-8):

DIM INCHES MM
A 0.053 - 0.069 1.35 - 1.75
B 0.004 - 0.010 0.10 - 0.25
C 0.053 - 0.061 1.35 - 1.55
D 0.013 - 0.020 0.33 - 0.51
E 0.007 - 0.010 0.17 - 0.25
F 0.185 - 0.200 4.70 - 5.10
G 0.228 - 0.244 5.80 - 6.20
H 0.150 - 0.157 3.80 - 4.00
J 0.016 - 0.050 0.40 - 1.27
K 0 - 8 0 - 8

Suggested Solder Pad Layout (TYP): 1.27mm, 0.80mm, 1.50mm, 6.50mm, 4.61mm

Internal Structure and Marking Code: Q05P10A 1RWH

Ordering Information:

Device Packing Part Number
MCQ05P10Y TP (Tape&Reel: 4Kpcs/Reel) MCQ05P10Y-TP

2409302230_MCC-MCQ05P10Y-TP_C3289860.pdf

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