MCC MCQ05P10Y TP P channel MOSFET with moisture sensitivity level 1 and UL 94 V 0 flammability rating
Product Overview
The MCQ05P10Y is a P-CHANNEL MOSFET featuring Split Gate Trench MOSFET Technology and a High Density Cell Design for low RDS(ON). It is designed for various applications requiring efficient power switching. This device is Moisture Sensitivity Level 1, Halogen Free (Green Device), and meets UL 94 V-0 flammability rating. It is Lead Free and RoHS Compliant, operating within a junction temperature range of -55C to +150C.
Product Attributes
- Brand: MCCSEMI
- Technology: Split Gate Trench MOSFET
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
- Compliance: Halogen Free (Green Device), Lead Free, RoHS Compliant
- Package Type: SOP-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | V | ||||
| Continuous Drain Current | ID | TA=25 | -4.5 | A | ||
| Total Power Dissipation | PD | W | ||||
| Pulsed Drain Current | IDM | A | ||||
| Single Pulsed Avalanche Energy | EAS | 56 | mJ | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -100 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -1.8 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-3A | 83 | 110 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-2A | 95 | 120 | m | |
| Continuous Body Diode Current | IS | -4.5 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-3A | -1.3 | V | ||
| Reverse Recovery Time | trr | VDS=-50V,VGS=-10V,ID=-5A | 40 | ns | ||
| Reverse Recovery Charge | Qrr | IS=-5A, dIF/dt=100A/s | 80 | nC | ||
| Input Capacitance | Ciss | VDS=-50V,VGS=0V,f=1MHz | 1062 | pF | ||
| Output Capacitance | Coss | VDS=-50V,VGS=0V,f=1MHz | 112 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-50V,VGS=0V,f=1MHz | 8.7 | pF | ||
| Total Gate Charge | Qg | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 19 | nC | ||
| Gate-Source Charge | Qgs | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 3 | nC | ||
| Gate-Drain Charge | Qgd | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 3.5 | nC | ||
| Turn-On Delay Time | td(on) | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 7.4 | ns | ||
| Turn-On Rise Time | tr | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 9.3 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 58 | ns | ||
| Turn-Off Fall Time | tf | VDD=-50V, VGS=-10V, RGEN=6, ID=-5A | 19 | ns | ||
| Gate Resistance | Rg | F=1 MHz, Open drain | 9.8 | |||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient | RJA | (Steady-State)(Note2) | 75 | C/W | ||
| Thermal Resistance Junction to Lead | RJL | (Steady-State) | 24 | C/W |
Dimensions (SOP-8):
| DIM | INCHES | MM |
|---|---|---|
| A | 0.053 - 0.069 | 1.35 - 1.75 |
| B | 0.004 - 0.010 | 0.10 - 0.25 |
| C | 0.053 - 0.061 | 1.35 - 1.55 |
| D | 0.013 - 0.020 | 0.33 - 0.51 |
| E | 0.007 - 0.010 | 0.17 - 0.25 |
| F | 0.185 - 0.200 | 4.70 - 5.10 |
| G | 0.228 - 0.244 | 5.80 - 6.20 |
| H | 0.150 - 0.157 | 3.80 - 4.00 |
| J | 0.016 - 0.050 | 0.40 - 1.27 |
| K | 0 - 8 | 0 - 8 |
Suggested Solder Pad Layout (TYP): 1.27mm, 0.80mm, 1.50mm, 6.50mm, 4.61mm
Internal Structure and Marking Code: Q05P10A 1RWH
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| MCQ05P10Y | TP (Tape&Reel: 4Kpcs/Reel) | MCQ05P10Y-TP |
2409302230_MCC-MCQ05P10Y-TP_C3289860.pdf
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