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quality Power Management Device MCC MCG50P03 TP P Channel MOSFET Featuring Trench Power LV MOSFET Technology factory
quality Power Management Device MCC MCG50P03 TP P Channel MOSFET Featuring Trench Power LV MOSFET Technology factory

Power Management Device MCC MCG50P03 TP P Channel MOSFET Featuring Trench Power LV MOSFET Technology

Key Attributes
Model Number: MCG50P03-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
6.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
477pF
Number:
1 P-Channel
Output Capacitance(Coss):
779pF
Input Capacitance(Ciss):
64pF@15V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
111.7nC@10V
Mfr. Part #:
MCG50P03-TP
Package:
DFN3333-8
Product Description

Product Overview

The MCG50P03 is a P-Channel MOSFET featuring Trench Power LV MOSFET Technology for high-speed switching and a high-density cell design for low RDS(on). This device is designed with an epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, a "Green" Device. It also boasts a Lead Free Finish/RoHS Compliant design. Ideal for various electronic applications requiring efficient power management.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Trench Power LV MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. "Green" Device
  • Compliance: Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =25V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1.2 -1.8 -2.8 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-15A 5.0 6.2 m
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-10A 6.9 11 m
Continuous Body Diode Current IS -50 A
Diode Forward Voltage VSD VGS=0V, IS=-20A -1.2 V
Reverse Recovery Time trr IF=-20A, dIF/dt=100A/s 24 ns
Reverse Recovery Charge Qrr IF=-20A, dIF/dt=100A/s 8.5 nC
Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHz 6464 pF
Output Capacitance Coss VDS=-15V,VGS=0V,f=1MHz 779 pF
Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V,f=1MHz 477 pF
Total Gate Charge Qg VDS=-15V, VGS=-10V, ID=-20A 111.7 nC
Gate-Source Charge Qgs VDS=-15V, VGS=-10V, ID=-20A 22.9 nC
Gate-Drain Charge Qg VDS=-15V, VGS=-10V, ID=-20A 21.1 nC
Turn-On Delay Time td(on) VDS=-15V,VGS=-10V, RG=3, IDS=-20A 15 ns
Turn-On Rise Time tr VDS=-15V,VGS=-10V, RG=3, IDS=-20A 79 ns
Turn-Off Delay Time td(off) VDS=-15V,VGS=-10V, RG=3, IDS=-20A 136 ns
Turn-Off Fall Time tf VDS=-15V,VGS=-10V, RG=3, IDS=-20A 80 ns
Maximum Ratings: Operating Junction Temperature Range -55 +150 C
Maximum Ratings: Storage Temperature Range -55 +150 C
Maximum Ratings: Thermal Resistance (Junction to Case) RJC 1.5 C/W
Maximum Ratings: Continuous Drain Current ID -200 A
Maximum Ratings: Pulsed Drain Current IDM Pulse Test: Pulse Width300s,Duty cycle 2% -200 A
Maximum Ratings: Avalanche Energy EAS 73 mJ
Maximum Ratings: Total Power Dissipation PD 83 W

Dimensions (DFN3333):

DIM INCHES MM
A 0.126 - 0.130 3.20 - 3.30
B 0.126 - 0.130 3.20 - 3.30
C 0.030 - 0.033 0.75 - 0.85
C1 0.007 - 0.009 0.18 - 0.22
C2 --- 0.002 --- 0.05
D 0.071 - 0.079 1.80 - 2.00
E 0.087 - 0.098 2.20 - 2.50
F 0.010 - 0.014 0.25 - 0.35
G 0.012 - 0.016 0.30 - 0.40
e 0.024 - 0.028 0.60 - 0.70
0.016 - 0.020 0.40 - 0.50

Ordering Information:

Device Packing Part Number
MCG50P03 Tape&Reel: 5Kpcs/Reel MCG50P03-TP

2410010102_MCC-MCG50P03-TP_C3277708.pdf

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