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quality MCC MCU15N10A TP N Channel MOSFET with Trench Power MV Technology and Moisture Sensitivity Level One factory
quality MCC MCU15N10A TP N Channel MOSFET with Trench Power MV Technology and Moisture Sensitivity Level One factory

MCC MCU15N10A TP N Channel MOSFET with Trench Power MV Technology and Moisture Sensitivity Level One

Key Attributes
Model Number: MCU15N10A-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
110mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.122nF@50V
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
MCU15N10A-TP
Package:
DPAK
Product Description

Product Overview

The MCU15N10A is an N-Channel MOSFET from MCCSEMI, featuring Trench Power MV MOSFET Technology for low RDS(on) due to its high-density cell design. This component is designed for excellent heat dissipation and comes in a DPAK package. It is moisture sensitivity level 1, halogen-free, and RoHS compliant. The device is suitable for applications requiring robust performance and reliable thermal management.

Product Attributes

  • Brand: MCCSEMI
  • Model: MCU15N10A
  • Technology: Trench Power MV MOSFET
  • Package: DPAK
  • Moisture Sensitivity Level: 1
  • Certifications: Halogen Free, "Green" Device, RoHS Compliant
  • Flammability Rating: UL 94 V-0

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TC=25C 15 A
Continuous Drain Current ID TC=100C 10.6 A
Pulsed Drain Current IDM Note 3 60 A
Single Pulse Avalanche Energy EAS Note 4 50 mJ
Total Power Dissipation PD Note 5 112 W
Operating Junction Temperature Range -55 +175 C
Storage Temperature Range -55 +175 C
Thermal Resistance Junction to Ambient RthJA Note 2 50 C/W
Thermal Resistance Junction to Case RthJC 3 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.1 1.8 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=8A 80 110 m
Gate Resistance RG f=1MHz, Open drain 2
Continuous Body Diode Current IS 15 A
Diode Forward Voltage VSD VGS=0V, IS=15A 1.2 V
Reverse Recovery Time trr IF=7.5A, dIF/dt=100A/s 33 ns
Reverse Recovery Charge Qrr 39 nC
Input Capacitance Ciss VDS=50V,VGS=10V,ID=10A 1122 pF
Output Capacitance Coss 31 pF
Reverse Transfer Capacitance Crss 28 pF
Total Gate Charge Qg VDS=50V, VGS=10V, RG=2.2, ID=10A 28 nC
Gate-Source Charge Qgs 6.8 nC
Gate-Drain Charge Qg 6 nC
Turn-On Delay Time td(on) 6.8 ns
Turn-On Rise Time tr 26 ns
Turn-Off Delay Time td(off) 26 ns
Turn-Off Fall Time tf 0.8 ns
Internal Structure
Marking Code

Dimensions (DPAK):

DIM INCHES MM NOTE
A 0.087 - 0.094 2.20 - 2.40
B 0.000 - 0.005 0.00 - 0.13
C 0.026 - 0.034 0.66 - 0.86
D 0.018 - 0.023 0.46 - 0.58
E 0.256 - 0.264 6.50 - 6.70
F 0.201 - 0.215 5.10 - 5.46
G 0.236 - 0.244 6.00 - 6.20
H 0.086 - 0.094 2.18 - 2.39
I 0.386 - 0.409 9.80 - 10.40
J 0.055 - 0.067 1.40 - 1.70
K 0.043 - 0.051 1.10 - 1.30
L 0.000 - 0.012 0.00 - 0.30
M 0.190 4.83 TYP.
O 0.114 2.90 TYP.
Q 0.063 1.60 TYP.
V 0.211 5.35 TYP.

Ordering Information:

Device Packing Part Number
MCU15N10A TP (Tape&Reel: 2.5Kpcs/Reel) MCU15N10A

2405221112_MCC-MCU15N10A-TP_C3277892.pdf

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