Silicon Carbide Power MOSFET Megain MGX15N120N 1200V N Channel for High Speed Switching Applications
Key Attributes
Model Number:
MGX15N120N
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
152A
Operating Temperature -:
-55℃~+175℃
RDS(on):
12.8mΩ@18V,60A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
336pF
Input Capacitance(Ciss):
3.936nF
Pd - Power Dissipation:
684W
Gate Charge(Qg):
280nC
Mfr. Part #:
MGX15N120N
Package:
TO-247-4
Product Description
Product Overview
The MGX15N120N is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This device is halogen-free and RoHS compliant, making it suitable for demanding applications such as PV string inverters, solar power optimizers, switch mode power supplies, online UPS/industrial UPS, and high voltage DC/DC converters.
Product Attributes
- Brand: MegaIN
- Material: Silicon Carbide
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Test Conditions | Value | Units | ||
| Product Summary | |||||
| VDS | 1200 | V | |||
| ID | 152 | A | |||
| RDS(ON) (at VGS = 20V) | 12 (Max: 15.6) | m | |||
| RDS(ON) (at VGS = 18V) | 12.8 (Max: 17) | m | |||
| RDS(ON) (at VGS = 15V) | 14.5 (Max: 19) | m | |||
| Features | |||||
| High speed switching | |||||
| Very low switching losses | |||||
| High blocking voltage with low on-resistance | |||||
| Temperature independent turn-off switching losses | |||||
| Halogen free, RoHS compliant | |||||
| Applications | |||||
| PV string inverters | |||||
| Solar power optimizer | |||||
| Switch mode power supplies | |||||
| Online UPS/Industrial UPS | |||||
| High Voltage DC/DC Converters | |||||
| Ordering Information | |||||
| Order code | Package | Form | Quantity | Marking | |
| MGX15N120N | TO-247-4 | Tube | 30 / Tube | MGX15N120N | |
| Absolute Maximum Ratings | |||||
| Parameter | Test Conditions | Value | Units | ||
| VDS (Drain-Source Voltage) | VGS = 0 V, ID = 100A | 1200 | V | ||
| ID (Drain Current Continuous) | VGS = 18 V, TC = 25 | 152 | A | ||
| IDM (Drain Current Pulsed) | 520 | A | |||
| PD (Total Power Dissipation) | Tc = 25 | 684 | W | ||
| VGS (Recommend Gate Source Voltage) | -5/+18 | V | |||
| Maximum Gate Source Voltage | -10/+25 | T | |||
| TSTG (Storage Temperature Range) | -55 to 175 | ||||
| TJ (Operating Junction Temperature Range) | -55 to 175 | ||||
| TL (Soldering Temperature) | 260 | ||||
| Thermal Characteristics | |||||
| Parameter | Max | Typ | Max | Units | |
| RJC (Thermal Resistance Junction to Case) | 0.22 | /W | |||
| Electrical Characteristics | |||||
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Static | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 100A | 1200 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 1200V, VGS = 0V | - | 1 | 100 | A |
| IGSS (Gate-Source Leakage Current) | VGS = 18V | - | 1 | 100 | nA |
| VGS(th) (Gate Threshold Voltage) | VGS = VDS, ID = 30mA | 1.8 | 2.8 | 3.8 | V |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 18V, ID = 60A | - | 12.8 | 17 | m |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 15V, ID = 60A | - | 14.5 | 19 | m |
| Dynamic | |||||
| Ciss (Input Capacitance) | VGS = 0V, VDS = 800V, f = 1MHz, VAC = 25mV | - | 3936 | - | pF |
| Coss (Output Capacitance) | - | 336 | - | ||
| Crss (Reverse Transfer Capacitance) | - | 14 | - | ||
| Eoss (Stored Energy) | 82 | J | |||
| Qg (Total Gate Charge) | VDS = 800V, VGS = -5/+18V ID = 60A | - | 280 | - | nC |
| Qgs (Gate-Source Charge) | - | 45 | - | ||
| Qgd (Gate-Drain Charge) | - | 125 | - | ||
| RG(int) (Internal Gate Resistance) | f = 1MHz, VAC = 25mV | - | 2.5 | - | |
| td(ON) (Turn-on Delay Time) | VDS = 800V, VGS = -5/+18V RG = 2.5, ID = 60A | - | 28 | - | nS |
| tr (Turn-on Rise Time) | - | 35 | - | ||
| td(OFF) (Turn-off Delay Time) | - | 72 | - | ||
| tf (Turn-off Fall Time) | - | 16 | - | ||
| EON (Turn-on Switching Energy) | VDS = 800V, VGS = -5/+18V RG = 2.5, ID = 60A | - | 666 | - | J |
| EOFF (Turn-off Switching Energy) | - | 487 | - | ||
| Body Diode Characteristics | |||||
| IS (Continuous Source Current) | - | - | 152 | A | |
| VSD (Diode Forward Voltage) | VGS = 0V, IS = 60A | - | 3.8 | - | V |
| trr (Reverse Recovery Time) | IS = 60A, VDS = 800V VGS = -5V di/dt = 1000A/s | - | 56 | - | nS |
| Qrr (Reverse Recovery Charge) | - | 898 | - | nC | |
| Irrm (Peak Reverse Recovery Current) | - | 28 | - | A | |
2508221750_Megain-MGX15N120N_C50407978.pdf
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