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quality High voltage N channel MOSFET MCC MCP75N10Y BP with Split Gate Trench Technology and RoHS compliance factory
quality High voltage N channel MOSFET MCC MCP75N10Y BP with Split Gate Trench Technology and RoHS compliance factory

High voltage N channel MOSFET MCC MCP75N10Y BP with Split Gate Trench Technology and RoHS compliance

Key Attributes
Model Number: MCP75N10Y-BP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
RDS(on):
8.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
2.429nF@50V
Pd - Power Dissipation:
156W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
MCP75N10Y-BP
Package:
TO-220AB(H)
Product Description

Product Overview

The MCP75N10Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for fast switching and soft recovery. This halogen-free, "Green" device meets UL 94 V-0 flammability rating and is RoHS compliant. It is suitable for a wide operating junction temperature range of -55C to +150C. Key applications leverage its efficient performance characteristics.

Product Attributes

  • Brand: MCC
  • Model: MCP75N10Y
  • Technology: Split Gate Trench MOSFET
  • Certifications: Halogen Free, "Green" Device, UL 94 V-0 Flammability Rating, RoHS Compliant
  • Packaging: Bulk (50pcs/Tube, 1Kpcs/Box, 5Kpcs/Carton)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TC=25 75 A
Pulsed Drain Current IDM (Note 3) 300 A
Total Power Dissipation PD (Note 4) 156 W
Single Pulsed Avalanche Energy EAS (Note 5) 182 mJ
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient RJA (Note 2) 40 C/W
Thermal Resistance Junction to Case RJC 0.8 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 2.8 4 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 7.2 8.6 m
VGS=6V, ID=20A 10 13 m
Gate Resistance Rg f=1MHz, Open drain 0.7
Continuous Body Diode Current IS 75 A
Diode Forward Voltage VSD VGS=0V, IS=20A 1.2 V
Reverse Recovery Time trr IF=20A,di/dt=100A/s 56 ns
Reverse Recovery Charge Qrr 101 nC
Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz 2429 pF
Output Capacitance Coss 710 pF
Reverse Transfer Capacitance Crss 13 pF
Total Gate Charge Qg VDD=50V, VGS=10V, RG=2.2, ID=25A 32 nC
Gate-Source Charge Qgs 8 nC
Gate-Drain Charge Qg 10 nC
Turn-On Delay Time td(on) 10 ns
Turn-On Rise Time tr 50 ns
Turn-Off Delay Time td(off) 23 ns
Turn-Off Fall Time tf 3.8 ns

2404031249_MCC-MCP75N10Y-BP_C3290505.pdf

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