Load Switching and PWM Applications Featuring MIRACLE POWER MU6004D N Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
MU6004D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
232pF
Input Capacitance(Ciss):
3.708nF
Output Capacitance(Coss):
265pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MU6004D
Package:
TO-252
Product Description
Product Overview
The MU6004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed with advanced Miracle Technology. It offers exceptional performance with a low 5.4m RDS(on) at VGS = 10V and low gate charge, making it ideal for load switching, PWM applications, and power management. This MOSFET is 100% EAS guaranteed and is Halogen-free and RoHS-compliant, ensuring reliability and environmental consciousness in demanding applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET, Miracle Technology
- Compliance: Halogen-free, RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 80 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 51 | A | ||
| IDM | Drain Current-Pulsed | 320 | A | |||
| PD | Maximum Power Dissipation, TC = 25C | 40 | W | |||
| EAS | Single Pulsed Avalanche Energy | 272 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.1 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 38 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A | - | 5.4 | 6.6 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 0.9 | - | |
| Ciss | Input Capacitance | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 3708 | - | pF |
| Coss | Output Capacitance | - | 265 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 232 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 45 | - | ns |
| tr | Turn-On Rise Time | - | 66 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 126 | - | ns | |
| tf | Turn-Off Fall Time | - | 78 | - | ns | |
| Qg | Total Gate Charge | VDS = 30V, VGS = 0 to 10V, ID = 30A | - | 80 | - | nC |
| Qgs | Gate-Source Charge | - | 22 | - | nC | |
| Qgd | Gate-Drain Charge | - | 28 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 80 | A |
| ISM | Maximum Pulsed Current | - | - | 320 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 30A, dIF/dt = 100A/s | - | 101 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 30A, dIF/dt = 100A/s | - | 324 | - | nC |
2504151445_MIRACLE-POWER-MU6004D_C47361192.pdf
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