N N MOSFET with 29A Continuous Drain Current and 60V Breakdown Voltage Megain MGB100D06L Device
Key Attributes
Model Number:
MGB100D06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
29A
RDS(on):
15mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
272pF
Number:
-
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
3.2pF
Pd - Power Dissipation:
20.8W
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
MGB100D06L
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The MGB100D06L is an N+N MOSFET with a 60V breakdown voltage, 29A continuous drain current, and a low on-state resistance of <15 m at VGS=10V. Featuring Advanced Trench MOS Technology, low gate charge, and 100% EAS Guaranteed, this device is ideal for motor control, DC/DC converter, and synchronous rectifier applications. A green device option is available.
Product Attributes
- Brand: MEGAIN
- Product Code: MGB100D06L
- Package: PDFN 3x3
- Quantity: 3000 / Tape & Reel
- Marking: MGB100D06L
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current Continuous (ID) (TC=25) | 29 | A | |||
| Drain Current Continuous (ID) (TC=100) | 23 | A | |||
| Pulsed Drain Current (IDM) | 58 | A | |||
| Single Pulse Avalanche Energy (EAS) | 45 | mJ | |||
| Avalanche Current (IAS) | 30 | A | |||
| Total Power Dissipation (PD) (TC=25C) | 20.8 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Characteristics | |||||
| Thermal Resistance Junction to Ambient (RJA) | 62.5 | /W | |||
| Thermal Resistance Junction to Case (RJC) | 6 | /W | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 60 | - | - | V |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, ID=10A | - | 10 | 15 | m |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, ID=10A | - | 15.7 | 21 | m |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.2 | 2 | 2.3 | V |
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V | - | - | 1 | uA |
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V, TJ=55 | - | - | 5 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | - | 1.0 | - | |
| Total Gate Charge (Qg) (10V) | VDS=30V, VGS=10V, ID=10A | - | 15.8 | - | nC |
| Total Gate Charge (Qg) (4.5V) | - | 8.7 | - | nC | |
| Gate-Source Charge (Qgs) | - | 3.1 | - | - | |
| Gate-Drain Charge (Qgd) | - | 4.4 | - | - | |
| Turn-on Delay Time (Td(ON)) | VDD=30V, VGS=10V, RG=3.3, ID=10A | - | 5.8 | - | nS |
| Turn-on Rise Time (Tr) | - | 3.5 | - | - | |
| Turn-off Delay Time (Td(OFF)) | - | 26 | - | - | |
| Turn-off Fall Time (Tf) | - | 3.2 | - | - | |
| Input Capacitance (Ciss) | VDS=30V, VGS=0V, F=1MHz | - | 760 | - | pF |
| Output Capacitance (Coss) | - | 272 | - | - | |
| Reverse Transfer Capacitance (Crss) | - | 26 | - | - | |
| Diode Characteristics | |||||
| Continuous Source Current (IS) | VG=VD=0V,Force Current | - | - | 29 | A |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A | - | - | 1.2 | V |
2504301615_Megain-MGB100D06L_C48678138.pdf
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