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quality Power MOSFET MIRACLE POWER MJQ28N60 with 28A Continuous Current and 100 Percent Avalanche Tested factory
quality Power MOSFET MIRACLE POWER MJQ28N60 with 28A Continuous Current and 100 Percent Avalanche Tested factory

Power MOSFET MIRACLE POWER MJQ28N60 with 28A Continuous Current and 100 Percent Avalanche Tested

Key Attributes
Model Number: MJQ28N60
Product Custom Attributes
Drain To Source Voltage:
605V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
2.389nF
Pd - Power Dissipation:
195W
Mfr. Part #:
MJQ28N60
Package:
TO-247
Product Description

Product Overview

The MJQ28N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. It offers a 600V drain-source voltage, 28A continuous drain current, and a typical on-resistance of 120m at VGS = 10V. This MOSFET is designed for easy gate switching control and is 100% avalanche tested. It is suitable for applications in PC power, server power, telecom power, adaptors, LCD & PDP TVs, LED lighting, and UPS systems. It is also applicable in Boost PFC switch, single-ended flyback or two-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Advanced Super Junction Technology

Technical Specifications

Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage / Current / Resistance VGS = 10V - 120 - m @ RDS(on)
Drain-Source Voltage - - - 600 V
Drain Current-Continuous TC = 25C - - 28 A
100% Avalanche Tested - - - - -
Absolute Maximum Ratings
Drain-Source Voltage (VDS) TC = 25C unless otherwise noted - - 600 V
Gate-Source Voltage (VGS) - - 30 - V
Drain Current-Continuous (ID) TC = 25C - - 28 A
Drain Current-Pulsed (IDM) b - - 84 A
Maximum Power Dissipation (PD) TC = 25C - - 195 W
Peak Diode Recovery dv/dt (dv/dt) c - - 15 V/ns
Single Pulsed Avalanche Energy (EAS) d - - 781 mJ
Operating and Store Temperature Range (TJ, TSTG) - -55 - 150 C
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC) - - 0.64 - C/W
Thermal Resistance, Junction to Ambient (RJA) - - 62 - C/W
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 10mA 605 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 600, VGS = 0V - - 1 A
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = 30V - - 100 nA
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID = 250A 2.8 - 4.2 V
Static Drain-Source On-Resistance (RDS(on)) VGS = 10V, ID = 10A - 120 150 m
Gate Resistance (RG) f = 1.0MHz - 5.8 -
Input Capacitance (Ciss) VDS = 50V, VGS = 0V, f = 10kHz - 2389 - pF
Output Capacitance (Coss) - - 218 - pF
Reverse Transfer Capacitance (Crss) - - 5.07 - pF
Turn-On Delay Time (td(on)) VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 - 12.4 - ns
Turn-On Rise Time (tr) - - 21.6 - ns
Turn-Off Delay Time (td(off)) - - 50 - ns
Turn-Off Fall Time (tf) - - 18.4 - ns
Total Gate Charge (Qg) VDD = 400V, VGS = 0 to 10V, ID = 11.3A - 47.59 - nC
Gate-Source Charge (Qgs) - - 8.52 - -
Gate-Drain Charge (Qgd) - - 8.30 - -
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IF = 1A - 0.7 - V
Body Diode Reverse Recovery Time (Trr) VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 288 - ns
Body Diode Reverse Recovery Charge (Qrr) VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 4.3 - C
Peak reverse recovery current (Irrm) VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 26.2 - A

2504151445_MIRACLE-POWER-MJQ28N60_C47361038.pdf

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