MDD Microdiode Semiconductor MDDG06R01L MOSFET Designed for High Current PWM and Motor Drive Applications
Key Attributes
Model Number:
MDDG06R01L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
330A
RDS(on):
1.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
203pF
Number:
1 N-channel
Output Capacitance(Coss):
3.885nF
Pd - Power Dissipation:
330W
Input Capacitance(Ciss):
7.397nF
Gate Charge(Qg):
-
Mfr. Part #:
MDDG06R01L
Package:
TOLL
Product Description
Product Overview
The MDDG06R01L is a 60V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for extremely low on-state resistance, achieving a maximum RDS(on) of 1.5 m at VGS = 10 V, ID = 30 A. It offers superior switching performance with a best-in-class soft body diode and is 100% UIS and dVDS tested. Key applications include PWM, Motor Drives, Uninterruptible Power Supplies, Micro Solar Inverters, and Battery Management Systems.
Product Attributes
- Brand: MDD Semiconductor
- Origin: Craftsman-Made Consciention Chip
- Model: MDDG06R01L
Technical Specifications
| Parameter | Symbol | Unit | Condition | Min | Typ | Max |
| Drain-Source Breakdown Voltage | V(BR)DSS | V | VGS=0V, ID=250A | 60 | ||
| Gate-Source Leakage Current | IGSS | nA | VGS=20V | 100 | ||
| Gate-Source Leakage Current | IGSS | nA | VGS=-20V | -100 | ||
| Drain-Source Leakage Current | IDSS | A | VDS=60V, VGS=0V | 1 | ||
| Gate Threshold Voltage | VGS(TH) | V | VDS=VGS, ID=250A | 1.2 | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | m | VGS=10V, ID=30A | 1.5 | ||
| Continuous Drain Current | ID | A | Calculated based on max junction temperature | 330 | ||
| Pulsed Drain Current | IDM | A | Note 2 | 1320 | ||
| Single Pulsed Avalanche Energy | EAS | mJ | Note 3 | 676 | ||
| Thermal Resistance (Junction to Case) | RJC | C/W | 0.46 | |||
| Junction Temperature | TJ | C | 150 | |||
| Storage Temperature | Tstg | C | -55 | 150 | ||
| Power Dissipation | PD | W | TA=25C | 330 | ||
| Gate-Source Voltage | VGS | V | -20 | 20 | ||
| Turn on Delay Time | td(on) | ns | VGS=10V, VDD=30V, ID=30A, RG=3 | 26 | ||
| Turn on Rise Time | tr | ns | VGS=10V, VDD=30V, ID=30A, RG=3 | 33 | ||
| Turn Off Fall Time | tf | ns | VGS=10V, VDD=30V, ID=30A, RG=3 | 25 | ||
| Turn Off Delay Time | td(off) | ns | VGS=10V, VDD=30V, ID=30A, RG=3 | 50 | ||
| Drain-Source Diode Forward Voltage | VSD | V | IS=30A, VGS=0V | 0.8 | 1.2 | |
| Body Diode Reverse Recovery Time | trr | ns | IF=30A, di/dt=100A/s | 74 | ||
| Body Diode Reverse Recovery Charge | Qrr | nC | IF=30A, di/dt=100A/s | 123 | ||
| Input Capacitance | Ciss | pF | VDS=32V, VGS=0V, f=1MHz | 3885 | ||
| Output Capacitance | Coss | pF | VDS=32V, VGS=0V, f=1MHz | 7397 | ||
| Reverse Transfer Capacitance | Crss | pF | VDS=32V, VGS=0V, f=1MHz | 203 | ||
| Total Gate Charge | Qg | nC | VDS=32V, VGS=10V, ID=30A | 120 | ||
| Gate Source Charge | Qgs | nC | VDS=32V, VGS=10V, ID=30A | 37 | ||
| Gate Drain Charge | Qgd | nC | VDS=32V, VGS=10V, ID=30A | 33 |
2508071805_MDD-Microdiode-Semiconductor-MDDG06R01L_C50176503.pdf
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