MCC SI2301A TP P Channel Enhancement Mode Field Effect Transistor with UL 94 V 0 Flammability Rating
Key Attributes
Model Number:
SI2301A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
175pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
880pF@6V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
14.5nC@4.5V
Mfr. Part #:
SI2301A-TP
Package:
SOT-23
Product Description
Product Overview
The SI2301A is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON), ensuring efficient power delivery. This rugged and reliable transistor offers high-speed switching capabilities and is housed in a compact SOT-23 package. It is suitable for applications requiring a drain-source voltage of -20V and a continuous drain current of -2.8A, with low on-resistance ratings of 120m at VGS=-4.5V and 150m at VGS=-2.5V. The epoxy meets UL 94 V-0 flammability rating and it is Moisture Sensitivity Level 1.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Package: SOT-23
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Certifications: Halogen free available upon request (add "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| P-Channel Enhancement Mode Field Effect Transistor | ||||
| Drain-source Voltage | VDS | -20 | V | |
| Drain Current-Continuous | ID | -2.8 | A | |
| Drain Current-Pulsed | IDM | -10 | A | a |
| Gate-source Voltage | VGS | V | ||
| Total Power Dissipation | PD | 1.0 | W | @ 25OC Unless Otherwise Specified |
| Thermal Resistance Junction to Ambient | RJA | 125 | /W | b |
| Operating Junction Temperature | TJ | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -20V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGFS | -100 | nA | VGS = 8V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSS | -100 | nA | VGS = -8V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.5 to -1.5 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(on) | 120 | m | VGS = -4.5V, ID = -2.8A |
| Static Drain-Source On-Resistance | RDS(on) | 150 | m | VGS = -2.5V, ID = -2.0A |
| Forward Transconductance | gFS | 880 | mS | VDS = -5V, ID = -2.8A |
| Input Capacitance | Ciss | 1200 | pF | VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6 |
| Reverse Transfer Capacitance | Crss | 175 | pF | VDS = -6V, ID = -2.8A, VGS = -4.5V |
| Output Capacitance | Coss | 800 | pF | VDS = -6V, VGS = 0V, f = 1.0 MHz |
| Turn-On Delay Time | td(on) | 11 | ns | |
| Turn-On Rise Time | tr | 14.5 | ns | |
| Turn-Off Delay Time | td(off) | 32 | ns | |
| Turn-Off Fall Time | tf | 23 | ns | |
| Total Gate Charge | Qg | 65 | nC | |
| Gate-Source Charge | Qgs | 45 | nC | |
| Gate-Drain Charge | Qgd | 11 | nC | |
| Drain-Source Diode Forward Current | IS | -0.75 | A | VGS = 0V, IS = -0.75A |
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | |
| Dimensions (Inches) | A, B, C, D, E, F, G, H, J, K | MIN: .0005 to .120, MAX: .0039 to .120 | inches | |
| Dimensions (MM) | A, B, C, D, E, F, G, H, J, K | MIN: .013 to 2.80, MAX: .100 to 3.04 | MM | |
| Device Packing | 3Kpcs/Reel | Tape&Reel: Part Number-TP |
2410122006_MCC-SI2301A-TP_C402364.pdf
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