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quality MIRACLE POWER MJF28N70 Featuring Low On Resistance and 700V Voltage Rating for Power Supply Solutions factory
quality MIRACLE POWER MJF28N70 Featuring Low On Resistance and 700V Voltage Rating for Power Supply Solutions factory

MIRACLE POWER MJF28N70 Featuring Low On Resistance and 700V Voltage Rating for Power Supply Solutions

Key Attributes
Model Number: MJF28N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
28A
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Pd - Power Dissipation:
34W
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
2.389nF
Mfr. Part #:
MJF28N70
Package:
TO-220F
Product Description

Product Overview

The MJF28N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with advanced Super Junction technology for easy gate switching control. It offers robust performance with a 700V breakdown voltage and a continuous drain current of 28A, featuring a low typical on-resistance of 135m at VGS = 10V. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Model: MJF28N70
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (TC = 25C unless otherwise noted)
VDS Drain-Source Voltage 700 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC = 25C 28 A
IDM Drain Current-Pulsed 84 A
PD Maximum Power Dissipation, TC = 25C 34 W
dv/dt Peak Diode Recovery dv/dt 15 V/ns
EAS Single Pulsed Avalanche Energy 500 mJ
TJ, TSTG Operating and Store Temperature Range -55 to 150 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 3.65 C/W
RJA Thermal Resistance, Junction to Ambient 80 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 705 - - V
IDSS Zero Gate Voltage Drain Current VDS = 700, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A - 135 150 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 5.5 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 2389 - pF
Coss Output Capacitance - 218 - pF
Crss Reverse Transfer Capacitance - 5.07 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 - 12.4 - ns
tr Turn-On Rise Time - 21.6 - ns
td(off) Turn-Off Delay Time - 50 - ns
tf Turn-Off Fall Time - 18.4 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 11.3A - 47.59 - nC
Qgs Gate-Source Charge - 8.52 - nC
Qgd Gate-Drain Charge - 8.30 - nC
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.71 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 288 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 4.3 - C
Irrm Peak reverse recovery current VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 26.2 - A

2504151445_MIRACLE-POWER-MJF28N70_C47361097.pdf

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