MDD Microdiode Semiconductor MDD20N06D Power Switching 60V N Channel Enhancement Mode MOSFET Device
Key Attributes
Model Number:
MDD20N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
26mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
850pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
MDD20N06D
Package:
TO-252
Product Description
Product Overview
The MDD20N06D is a 60V N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers excellent package heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. The device is specified for avalanche energy and is suitable for power switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | ±20 | V | ||||
| ID | 20 | A | ||||
| Continuous Drain Current | ID | 20 | A | |||
| Power Dissipation | PD | 40 | W | |||
| Storage Temperature | Tstg | -50 | ~+150 | |||
| Pulsed Drain Current | IDM | (Note 1) | 80 | A | ||
| Avalanche Energy Single Pulsed | EAS | (Note 2) | 49 | mJ | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Note 3) | 100 | / W | ||
| Thermal Resistance Junction-to-Case | RJC | (Note 3) | 3.12 | / W | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 60 | -- | -- | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | -- | ±100 | uA | |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V | -- | 1 | nA | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 1.0 | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A | 26 | 35 | mΩ | |
| VGS=4.5V, ID=10A | 35 | 50 | mΩ | |||
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHz | 850 | 1700 | pF | |
| Output Capacitance | Coss | 60 | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | 55 | 110 | pF | ||
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=10A (Note1,2) | 18 | 36 | nC | |
| Gate Source Charge | Qgs | 2.0 | nC | |||
| Gate Drain Charge | Qgd | 4.4 | nC | |||
| Turn on Delay Time | td(on) | VDS=30V, VGS =10V, RG=3Ω (Note1,2) | -- | 4.2 | -- | ns |
| Turn on Rise Time | tr | -- | 3.4 | -- | ns | |
| Turn Off Delay Time | td(off) | -- | 16 | -- | ns | |
| Turn Off Fall Time | tf | -- | 2 | -- | ns | |
| Source drain current(Body Diode) | ISD | -- | -- | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | IS=10A, VGS=0V | -- | 1.2 | V | |
| Max Pulsed Current | ISM | -- | -- | 80 | A |
2506191136_MDD-Microdiode-Semiconductor-MDD20N06D_C45990959.pdf
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