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quality Load Switch and PWM Application MOSFET MIRACLE POWER MU3020D with Halogen Free RoHS Compliant Design factory
quality Load Switch and PWM Application MOSFET MIRACLE POWER MU3020D with Halogen Free RoHS Compliant Design factory

Load Switch and PWM Application MOSFET MIRACLE POWER MU3020D with Halogen Free RoHS Compliant Design

Key Attributes
Model Number: MU3020D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
50W
Mfr. Part #:
MU3020D
Package:
TO-252
Product Description

Product Overview

The MU3020D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 30V drain-source voltage and 190A continuous drain current with a typical RDS(on) of 1.9m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM, and power management applications. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 30 V
VGS Gate-Source Voltage TC = 25C unless otherwise noted - - 20 V
ID Drain Current-Continuous TC = 25C - - 190 A
ID Drain Current-Continuous TC = 100C - - 120 A
IDM Drain Current-Pulsed - - - 760 A
PD Maximum Power Dissipation TC = 25C - - 50 W
EAS Single Pulsed Avalanche Energy - - - 625 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 2.5 - C/W
RJA Thermal Resistance, Junction to Ambient - - 35 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.5 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 1.9 2.4 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 10A - 2.4 3.0 m
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.1 -
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 6278 - pF
Coss Output Capacitance - - 863 - pF
Crss Reverse Transfer Capacitance - - 532 - pF
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3.0 - 13 - ns
tr Turn-On Rise Time - - 29 - ns
td(off) Turn-Off Delay Time - - 85 - ns
tf Turn-Off Fall Time - - 50 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 20A - 108 - nC
Qgs Gate-Source Charge - - 20 - -
Qgd Gate-Drain Charge - - 20 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 190 A
ISM Maximum Pulsed Current - - - 760 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 28 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 16 - nC

2504151445_MIRACLE-POWER-MU3020D_C47361173.pdf
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