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quality Low RDS on N Channel MOSFET MIRACLE POWER MU2001D Featuring 20V Drain Source Voltage and 90A Current factory
quality Low RDS on N Channel MOSFET MIRACLE POWER MU2001D Featuring 20V Drain Source Voltage and 90A Current factory

Low RDS on N Channel MOSFET MIRACLE POWER MU2001D Featuring 20V Drain Source Voltage and 90A Current

Key Attributes
Model Number: MU2001D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
90A
RDS(on):
3.1mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
465pF
Input Capacitance(Ciss):
3.479nF
Output Capacitance(Coss):
526pF
Pd - Power Dissipation:
54W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
MU2001D
Package:
TO-252
Product Description

Product Overview

The MU2001D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers a 20V drain-source voltage and a continuous drain current of 90A, with a low RDS(on) of 2.4m at VGS = 4.5V. This MOSFET is designed for excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It features 100% EAS guaranteed and is Halogen-free and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 20 V
VGS Gate-Source Voltage - - ±12 V
ID Drain Current-Continuous TC = 25C - - 90 A
ID Drain Current-Continuous TC = 100C - - 57 A
IDM Drain Current-Pulsed - - 360 A
PD Maximum Power Dissipation TC = 25C - - 54 W
EAS Single Pulsed Avalanche Energy - - 156 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 2.32 C/W
RJA Thermal Resistance, Junction to Ambient - - 32 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 20 - - V
IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±12V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 0.5 0.8 1.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 30A - 2.4 3.1 m
RDS(on) Static Drain-Source On-Resistance VGS = 2.5V, ID = 20A - 3.3 4.3 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - - -
Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz - 3479 - pF
Coss Output Capacitance - 526 - pF
Crss Reverse Transfer Capacitance - 465 - pF
On Characteristics
td(on) Turn-On Delay Time VDD = 10V, VGS = 10V, ID = 30A, RGEN = 3.0 - 8.0 - ns
tr Turn-On Rise Time - 19 - ns
td(off) Turn-Off Delay Time - 73 - ns
tf Turn-Off Fall Time - 80 - ns
Qg Total Gate Charge VDS = 10V, VGS = 0 to 8V, ID = 30A - 65 - nC
Qgs Gate-Source Charge - 8.0 - -
Qgd Gate-Drain Charge - 12 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 90 A
ISM Maximum Pulsed Current - - 360 -
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 16 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 5.6 - nC

2504151445_MIRACLE-POWER-MU2001D_C47361157.pdf
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