MCC MCP07N65 BP N Channel MOSFET with 7 Amp Continuous Drain Current and 30 Volt Gate Source Voltage
Key Attributes
Model Number:
MCP07N65-BP
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.15Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
3.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.6nF@25V
Pd - Power Dissipation:
73W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
MCP07N65-BP
Package:
TO-220AB-3
Product Description
Product Overview
The MCP07N65 is an N-Channel MOSFET designed for high current applications. It features a high current rating, an epoxy meeting UL 94 V-0 flammability rating, and Moisture Sensitivity Level 1 compliance. This device is Halogen Free, a Green device, and Lead Free/RoHS Compliant. It is suitable for various industrial applications requiring robust performance and safety compliance.
Product Attributes
- Brand: MCCSEMI
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current @ 25C | ID | 7 | A | |||
| Continuous Drain Current @ 100C | ID | 4.2 | A | |||
| Pulsed Drain Current | IDM | (Note 2) | 28 | A | ||
| Power Dissipation | PD | 73 | W | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Case | Rating 1.71C/W | |||||
| Pulsed Avalanche Rating | EAS | (Note 3) | 220 | mJ | ||
| Single Pulse Avalanche | IAS | (Note 3) VDD=50V, VDS=650V, RG=25, TJ=25C. | 7 | A | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | V | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =30V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =650V, VGS =0V,TJ=25C | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =650V, VGS =0V,TJ=150C | 10 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=3.5A | 1.15 | 1.4 | ||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f =1MHz | 1600 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f =1MHz | 85 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f =1MHz | 3.5 | pF | ||
| Total Gate Charge | Qg | VDD=520V,VGS=10V,ID=7A | 26 | nC | ||
| Gate-Source Charge | Qgs | VDD=520V,VGS=10V,ID=7A | 10.5 | nC | ||
| Gate-Drain Charge | Qgd | VDD=520V,VGS=10V,ID=7A | 7.1 | nC | ||
| Maximum Body-Diode Continuous Current | IS | 7 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IF=IS | 1.5 | V |
Ordering Information
| Part Number | Packing |
|---|---|
| MCP07N65-BP | Bulk: 1Kpcs/Box |
2410010231_MCC-MCP07N65-BP_C779261.pdf
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