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quality Power MOSFET MIRACLE POWER MJQ54N65FA Suitable for Full Bridge and Phase Shift Bridge Power Conversion factory
quality Power MOSFET MIRACLE POWER MJQ54N65FA Suitable for Full Bridge and Phase Shift Bridge Power Conversion factory

Power MOSFET MIRACLE POWER MJQ54N65FA Suitable for Full Bridge and Phase Shift Bridge Power Conversion

Key Attributes
Model Number: MJQ54N65FA
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
54A
RDS(on):
72mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Output Capacitance(Coss):
414pF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
4.528nF
Gate Charge(Qg):
93.8nC@13V
Mfr. Part #:
MJQ54N65FA
Package:
TO-247
Product Description

Product Overview

The MJQ54N65FA is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. This device is 100% avalanche tested and is designed for high-efficiency applications such as soft switching boost PFC, telecom power, EV charging, solar inverters, and server power supplies. It is also suitable for phase-shift-bridge (ZVS), LLC, half bridge, asymmetric half bridge, series resonance half bridge, and full bridge topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Model: MJQ54N65FA
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous (TC = 25C) 54 A
ID Drain Current-Continuous (TC = 100C) 38 A
IDM Drain Current-Pulsed 162 A
PD Maximum Power Dissipation (TC = 25C) 250 W
dv/dt Peak Diode Recovery dv/dt 50 V/s
EAS Single Pulsed Avalanche Energy 720 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.5 C/W
RJA Thermal Resistance, Junction to Ambient 62 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 655 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 2 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.0 - 5.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 14A - 60 72 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 13.1 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1.0MHz - 4528 - pF
Coss Output Capacitance - 414 - pF
Crss Reverse Transfer Capacitance - 3.0 - pF
Switching Characteristics (On Characteristics)
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 17.1A, RG = 5.3 - 21.6 - ns
tr Turn-On Rise Time - 10.7 - ns
td(off) Turn-Off Delay Time - 86.6 - ns
tf Turn-Off Fall Time - 8.6 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 17.1A - 93.8 - nC
Qgs Gate-Source Charge - 24.8 -
Qgd Gate-Drain Charge - 34.9 -
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.64 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 33A, dIF/dt = 60A/s - 244 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 33A, dIF/dt = 60A/s - 1.1 - C
Irrm Peak reverse recovery current VR = 400V, IF = 33A, dIF/dt = 60A/s - 8.9 - A

2504151445_MIRACLE-POWER-MJQ54N65FA_C47361044.pdf

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