Ultrafast Soft Recovery Diode MICROCHIP APT2X61D100J for High Power Density and Reliability Systems
Key Attributes
Model Number:
APT2X61D100J
Product Custom Attributes
Mfr. Part #:
APT2X61D100J
Product Description
Product Overview
The APT2X61D100J and APT2X60D100J are ultrafast soft recovery rectifier diodes designed for high-reliability systems. They offer low losses, low noise switching, and cooler operation, leading to increased system power density. These diodes feature ultrafast recovery times, soft recovery characteristics, and are housed in the popular SOT-227 package. Key advantages include low forward voltage, high blocking voltage, and low leakage current, making them suitable for a wide range of demanding applications.
Product Attributes
- Brand: APT (Advanced Power)
- Package: SOT-227 (ISOTOP)
- Certifications: UL Recognized
Technical Specifications
| Model | Voltage (VR) | Current (IF(AV)) | Package | Features |
| APT2X61D100J / APT2X60D100J | 1000V | 55A | SOT-227 | Ultrafast Soft Recovery Diode, Low Losses, Low Noise Switching, Cooler Operation, Higher Reliability Systems, Increased System Power Density, Ultrafast Recovery Times, Soft Recovery Characteristics, Low Forward Voltage, High Blocking Voltage, Low Leakage Current |
| Characteristic / Test Conditions | Symbol | MIN | TYP | MAX | UNIT |
| Forward Voltage, IF = 60A | VF | 1.9 | 2.5 | Volts | |
| Forward Voltage, IF = 120A | VF | 2.2 | Volts | ||
| Maximum Reverse Leakage Current, VR = 200V | IRM | 250 | A | ||
| Maximum Reverse Leakage Current, VR = VR Rated, TJ = 125C | IRM | 500 | A | ||
| Junction Capacitance, VR = VR Rated | CT | 65 | pF | ||
| Maximum D.C. Reverse Voltage | VR | 1000 | Volts | ||
| Maximum Peak Repetitive Reverse Voltage | VRRM | 1000 | Volts | ||
| Maximum Working Peak Reverse Voltage | VRWM | 1000 | Volts | ||
| Maximum Average Forward Current (TC = 95C, Duty Cycle = 0.5) | IF(AV) | 55 | Amps | ||
| RMS Forward Current (Square wave, 50% duty) | IF(AV) | 75 | Amps | ||
| Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) | IFSM | 540 | Amps | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 175 | C | |
| Lead Temperature for 10 Sec. | TL | 300 | C | ||
| Junction-to-Case Thermal Resistance | RJC | 0.56 | C/W | ||
| Junction-to-Ambient Thermal Resistance | RJA | 20 | C/W | ||
| Package Weight | WT | 29.2 | g | ||
| Maximum Mounting Torque | Torque | 0.75 | Nm |
| Characteristic / Test Conditions | Symbol | MIN | TYP | MAX | UNIT |
| Reverse Recovery Time, IF = 60A, diF/dt = -200A/s, VR = 667V, TC = 25C | trr | 148 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -200A/s, VR = 667V, TC = 25C | Qrr | 6.00 | C | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -200A/s, VR = 667V, TC = 25C | IRRM | 30 | Amps | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -1000A/s, VR = 667V, TC = 125C | trr | 90.9 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -1000A/s, VR = 667V, TC = 125C | Qrr | 524 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -1000A/s, VR = 667V, TC = 125C | IRRM | 120 | Amps | ||
| Reverse Recovery Time, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | trr | 174 | ns | ||
| Reverse Recovery Charge, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | Qrr | 0.174 | C | ||
| Maximum Reverse Recovery Current, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | IRRM | 0.524 | Amps |
2412111130_MICROCHIP-APT2X61D100J_C21426009.pdf
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