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quality MDD Microdiode Semiconductor MDD12N65F 650V N Channel MOSFET Designed for Switch Mode Power Supplies factory
quality MDD Microdiode Semiconductor MDD12N65F 650V N Channel MOSFET Designed for Switch Mode Power Supplies factory

MDD Microdiode Semiconductor MDD12N65F 650V N Channel MOSFET Designed for Switch Mode Power Supplies

Key Attributes
Model Number: MDD12N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
640mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
7.4pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2nF@25V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
41.9nC@10V
Mfr. Part #:
MDD12N65F
Package:
TO-220F
Product Description

650V N-Channel Enhancement Mode MOSFET

The MDD12N65F/MDD12N65P is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. It features ultra-low gate charge, low reverse transfer capacitance, and fast switching capability, making it ideal for switch mode power supplies, electronic lamp ballasts, and LED power supplies. The device has been avalanche energy tested and offers improved dv/dt capability and high ruggedness.

General Features

  • Ultra low gate charge
  • Low reverse transfer Capacitance
  • Fast switching capability
  • Avalanche energy tested
  • Improved dv/dt capability, high ruggedness

Applications

  • High efficiency switch mode power supplies
  • Electronic lamp ballasts based on half bridge
  • LED power supplies

Technical Specifications

nC nC nC uC
Parameter Symbol MDD12N65F/MDD12N65P Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID (Tc=25) 12 A
Power Dissipation (TO-220F) PD 42 W
Power Dissipation (TO-220) PD 150 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~ 150
Pulsed Drain Current (Note 1) IDM 48 A
Avalanche Energy Single Pulsed (Note 2) EAS 500 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 5 V/ns
Diode pulse current IS,pulse 48 A
Continuous diode forward current IS 12 A
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS (VGS=0V, ID=250A) 650 V
Gate-Source Leakage Current IGSS (VGS=±30V, VDS=0V) ±100 nA
Drain-Source Leakage Current IDSS (VDS=650V, VGS=0V) 1 uA
Gate Threshold Voltage VGS(TH) (VDS=VGS, ID=250A) 2.0 ~ 4.0 V
Drain-Source On-State Resistance RDS(ON) (VGS=10V, ID=6A) 0.8
Input Capacitance Ciss (VDS=25V, VGS=0V, f=1MHz) 2000 pF
Output Capacitance Coss (VDS=25V, VGS=0V, f=1MHz) 164 pF
Reverse Transfer Capacitance Crss (VDS=25V, VGS=0V, f=1MHz) 7.4 pF
Total Gate Charge Qg (VDS=520V, VGS=10V, ID=12A) 41.9
Gate Source Charge Qgs (VDS=520V, VGS=10V, ID=12A) 10.8
Gate Drain Charge Qgd (VDS=520V, VGS=10V, ID=12A) 15
Turn on Delay Time td(on) (VDS=325V, ID=12A, RG=10) 14.6 ns
Turn on Rise Time tr (VDS=325V, ID=12A, RG=10) 37.8 ns
Turn Off Delay Time td(off) (VDS=325V, ID=12A, RG=10) 69.3 ns
Turn Off Fall Time tf (VDS=325V, ID=12A, RG=10) 15.8 ns
Source drain current (Body Diode) ISD 12 A
Drain-Source Diode Forward Voltage VSD (IS=12A, VGS=0V) 1.5 V
Max Pulsed Current ISM 48 A
Body Diode Reverse Recovery Time trr (VR=325V, IF=12A, -diF/dt =100A/s) 450.4 ns
Body Diode Reverse Recovery Charge Qrr (VR=325V, IF=12A, -diF/dt =100A/s) 4.75

2408090958_MDD-Microdiode-Semiconductor-MDD12N65F_C5299407.pdf

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