MCC MCAC150N03A TP MOSFET with Trench Power MV Technology and low RDS ON in compact DFN5060 package
Key Attributes
Model Number:
MCAC150N03A-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
697pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
4.758nF@15V
Gate Charge(Qg):
92.7nC@10V
Mfr. Part #:
MCAC150N03A-TP
Package:
DFN5060
Product Description
Product Overview
The MCAC150N03A is an N-Channel MOSFET featuring Trench Power MV MOSFET Technology and a high-density cell design for low RDS(ON). It offers excellent heat dissipation due to its DFN5060 package. This device is Moisture Sensitivity Level 1, Halogen Free ("Green" Device), and meets UL 94 V-0 flammability rating. It is Lead Free and RoHS Compliant. The operating junction temperature range is -55C to +150C.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Technology: Trench Power MV MOSFET
- Package: DFN5060
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free ("Green" Device), Lead Free, RoHS Compliant
- Flammability Rating: UL 94 V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 1.5 | 2 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=20A | 2.4 | 3 | m | |
| Gate Resistance | Rg | f=1MHz, Open drain | 2.9 | |||
| Continuous Body Diode Current | IS | 150 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 1.2 | V | ||
| Reverse Recovery Time | trr | IS=20A,di/dt=500A/s | 48 | ns | ||
| Reverse Recovery Charge | Qrr | 46 | nC | |||
| Input Capacitance | Ciss | VDS=15V,VGS=10V,ID=20A | 4758 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 757 | pF | ||
| Reverse Transfer Capacitance | Crss | 697 | pF | |||
| Total Gate Charge | Qg | VDD=15V, VGS=10V, RG=3, ID=20A | 101 | nC | ||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qg | 25 | nC | |||
| Turn-On Delay Time | td(on) | 11 | ns | |||
| Turn-On Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 90 | ns | |||
| Turn-Off Fall Time | tf | 62 | ns | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | 46 | C/W | ||
| Thermal Resistance Junction to Case | RJC | 1.67 | C/W | |||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 95 | A | ||
| Continuous Drain Current | ID | TC=100 | A | |||
| Pulsed Drain Current | IDM | (Note 3) | 300 | A | ||
| Total Power Dissipation | PD | (Note 4) | 400 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Note 5) | mJ |
Dimensions (DFN5060)
| Pin | Dimension | MIN (INCHES) | MAX (INCHES) | MIN (MM) | MAX (MM) |
|---|---|---|---|---|---|
| A | 0.031 | 0.047 | 0.80 | 1.20 | |
| B | 4.90 | 5.64 | |||
| C | 0.193 | 0.222 | |||
| D | 0.232 | 0.250 | 5.90 | 6.35 | |
| E | 0.148 | 0.167 | 3.75 | 4.25 | |
| F | 0.126 | 0.154 | 3.20 | 3.92 | |
| G | 0.189 | 0.213 | 4.80 | 5.40 | |
| H | 0.222 | 0.239 | 5.65 | 6.06 | |
| K | 0.045 | 0.059 | 1.15 | 1.50 | |
| J | 0.012 | 0.020 | 0.30 | 0.50 | |
| L | 0.046 | 0.054 | 1.17 | 1.37 | |
| M | 0.012 | 0.028 | 0.30 | 0.71 | |
| N | 0.016 | 0.028 | 0.40 | 0.71 | |
| Center Pad | 0.010 TYP. | 0.254 TYP. |
2312030034_MCC-MCAC150N03A-TP_C5795904.pdf
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