High Speed Switching MOSFET MCC MCQ4503B TP Dual N Channel and P Channel with Trench Power LV Technology
Key Attributes
Model Number:
MCQ4503B-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
RDS(on):
55mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF@15V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
535pF@15V
Gate Charge(Qg):
7.2nC@10V
Mfr. Part #:
MCQ4503B-TP
Package:
SOP-8
Product Description
Product Overview
The MCQ4503B is a dual N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET Technology and a high-density cell design for low RDS(on) and high-speed switching. This product is Halogen Free, meets UL 94 V-0 flammability rating, and is Lead Free/RoHS Compliant. It is designed for applications requiring efficient power management and fast switching characteristics.
Product Attributes
- Brand: MCCSEMI
- Technology: Trench Power LV MOSFET
- Certifications: Halogen Free, UL 94 V-0 Flammability Rating, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Ratings | ||||||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Operating Junction Temperature Range | -55 | 150 | °C | |||
| Storage Temperature Range | -55 | 150 | °C | |||
| Thermal Resistance (Junction to Ambient) | RθJA | 62.5 | °C/W | |||
| Total Power Dissipation | PD | TA=25°C | 2 | A | ||
| Pulsed Drain Current (1) (P-Channel) | IDM | TA=25°C | -27 | A | ||
| Pulsed Drain Current (1) (P-Channel) | IDM | TA=70°C | -4.4 | A | ||
| Continuous Drain Current (P-Channel) | ID | TA=25°C | -4.5 | A | ||
| Continuous Drain Current (P-Channel) | ID | TA=70°C | -3.5 | A | ||
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | |||
| Gate-Source Voltage (N-Channel) | VGS | ±12 | V | |||
| Pulsed Drain Current (1) (N-Channel) | IDM | TA=25°C | 23 | A | ||
| Pulsed Drain Current (1) (N-Channel) | IDM | TA=70°C | A | |||
| Continuous Drain Current (N-Channel) | ID | TA=25°C | 5.6 | A | ||
| Continuous Drain Current (N-Channel) | ID | TA=70°C | A | |||
| N-Channel Electrical Characteristics @ 25°C | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 0.65 | 0.9 | 1.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5.6A | 19 | 25 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=5.0A | 22 | 31 | mΩ | |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f =1MHz | 535 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f =1MHz | 130 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f =1MHz | 36 | pF | ||
| Total Gate Charge | Qg | VDS=15V,VGS=4.5V,ID=5.6A | 4.8 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V,VGS=4.5V,ID=5.6A | 1.2 | nC | ||
| Gate-Drain Charge | Qg d | VDS=15V,VGS=4.5V,ID=5.6A | 1.7 | nC | ||
| Turn-On Delay Time | td(on) | VGS=4.5V,VDS=15V,ID=1A, RGEN=2.8Ω | 12 | ns | ||
| Turn-On Rise Time | tr | VGS=4.5V,VDS=15V,ID=1A, RGEN=2.8Ω | 52 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=4.5V,VDS=15V,ID=1A, RGEN=2.8Ω | 17 | ns | ||
| Turn-Off Fall Time | tf | VGS=4.5V,VDS=15V,ID=1A, RGEN=2.8Ω | 10 | ns | ||
| Body-Diode Continuous Current | IS | 5.6 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=5.6A | 0.8 | 1.2 | V | |
| P-Channel Electrical Characteristics @ 25°C | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -0.6 | -0.9 | -1.4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-4.4A | 38 | 55 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-4A | 45 | 66 | mΩ | |
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f =1MHz | 680 | pF | ||
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f =1MHz | 105 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f =1MHz | 68 | pF | ||
| Total Gate Charge | Qg | VDS=-15V,VGS=-10V,ID=-4.4A | 7.2 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V,VGS=-10V,ID=-4.4A | 1.2 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-15V,VGS=-10V,ID=-4.4A | 1.6 | nC | ||
| Turn-On Delay Time | td(on) | VGS=-10V,VDS=-15V,ID=-1A, RGEN=2.5Ω,RL=15Ω | 15 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V,VDS=-15V,ID=-1A, RGEN=2.5Ω,RL=15Ω | 63 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=-10V,VDS=-15V,ID=-1A, RGEN=2.5Ω,RL=15Ω | 21 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V,VDS=-15V,ID=-1A, RGEN=2.5Ω,RL=15Ω | 12 | ns | ||
| Body-Diode Continuous Current | IS | -4.4 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-4.4A | -0.8 | -1.2 | V | |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCQ4503B | Tape&Reel: 4Kpcs/Reel | -TP |
2411220127_MCC-MCQ4503B-TP_C3279999.pdf
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