MCC SIL03N10 TP N channel MOSFET Featuring High Density Cell Design and Moisture Sensitivity Level 1
Key Attributes
Model Number:
SIL03N10-TP
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
32pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
810pF@50V
Pd - Power Dissipation:
-
Gate Charge(Qg):
19.2nC@10V
Mfr. Part #:
SIL03N10-TP
Package:
SOT-23-6L
Product Description
Product Overview
The SIL03N10 is an N-channel MOSFET featuring a high-density cell design for low RDS(on) and Trench Power HV MOSFET Technology. It is designed for applications requiring efficient power handling and robust performance. The device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free available upon request. It is Lead Free Finish/RoHS Compliant.
Product Attributes
- Brand: MCCSEMI
- Technology: Trench Power HV MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Available Upon Request (Suffix "-HF")
- RoHS Compliant: Yes (Suffix "P" designates RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=3A | 95 | 120 | m | |
| VGS=4.5V, ID=2.4A | 100 | 140 | m | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=3A | 0.8 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | 810 | pF | ||
| Output Capacitance | Coss | 40 | pF | |||
| Reverse Transfer Capacitance | Crss | 32 | pF | |||
| Total Gate Charge | Qg | VDS=80V,VGS=10V,ID=2.5A | 19.2 | nC | ||
| Gate-Source Charge | Qgs | 3.4 | nC | |||
| Gate-Drain Charge | Qg | 6.1 | nC | |||
| Turn-On Delay Time | td(on) | VGS=10V,VDS=50V,RL=6.4 RGEN=3 | 15 | ns | ||
| Turn-On Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(off) | 30 | ns | |||
| Turn-Off Fall Time | tf | 5 | ns | |||
| Pulsed Drain Current (Note 2) | IDM | TA=25C | 15 | A | ||
| TA=70C | 3 | A | ||||
| Total Power Dissipation | PD | Device Mounted on FR-4 PCB, 1inch x 0.85inch x 0.062inch (Note 1) | 1.5 | W | ||
| Single Pulsed Avalanche Energy | EAS | 8 | mJ | |||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance | RJA | Junction to Ambient (Note 1) | 83 | C/W | ||
| Thermal Resistance | RJL | Junction to Lead | 36 | C/W | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Drain-Source Voltage | VDS | 100 | V |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SIL03N10 | Tape&Reel: 3Kpcs/Reel | Part Number-TP |
Note: Add "-HF" Suffix for Halogen Free, e.g., Part Number-TP-HF.
2410010231_MCC-SIL03N10-TP_C779233.pdf
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