Silicon Carbide Schottky Diode 1200 Volt 20 Amp Microchip MSC020SDA120B for High Voltage Applications
Key Attributes
Model Number:
MSC020SDA120B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
115A
Reverse Leakage Current (Ir):
200uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@20A
Current - Rectified:
49A
Mfr. Part #:
MSC020SDA120B
Package:
TO-247-2
Product Description
Product Overview
The Microsemi MSC020SDA120B is a 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a two-lead TO-247 package. This SiC SBD offers enhanced performance over traditional silicon diodes, reducing the total cost of ownership for high-voltage applications. Its key features include no reverse recovery, low forward voltage, low leakage current, and avalanche-energy rating, leading to benefits such as high switching frequency, low switching losses, reduced EMI, higher reliability, and increased system power density.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Package: TO-247
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Unit | Ratings | Conditions |
| Maximum DC reverse voltage | VR | V | 1200 | |
| Maximum peak repetitive reverse voltage | VRRM | V | 1200 | |
| Maximum working peak reverse voltage | VRWM | V | 1200 | |
| Maximum DC forward current | IF | A | 49 | TC = 25 C |
| Maximum DC forward current | IF | A | 22 | TC = 135 C |
| Maximum DC forward current | IF | A | 18 | TC = 145 C |
| Repetitive peak forward surge current | IFRM | A | 64 | TC = 25 C, tp = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | A | 115 | TC = 25 C, tp = 8.3 ms, half sine wave |
| Total power dissipation | PTOT | W | 186 | TC = 25 C |
| Total power dissipation | PTOT | W | 80 | TC = 110 C |
| Single-pulse avalanche energy | EAS | mJ | 100 | Starting TJ = 25 C, peak IL = 20 A |
| Junction-to-case thermal resistance | RJC | C/W | 0.95 | Max |
| Junction-to-case thermal resistance | RJC | C/W | 0.65 | Typ |
| Operating junction and storage temperature range | TJ, TSTG | C | 175 | Max |
| Lead temperature for 10 seconds | TL | C | 300 | |
| Package weight | Wt | g | 6.2 | Typ |
| Mounting torque, 6-32 or M3 screw | N-m | 1.1 | Max | |
| Mounting torque, 6-32 or M3 screw | lbf-in | 10 | Max | |
| Forward voltage | VF | V | 1.8 | IF = 20 A, Max |
| Forward voltage | VF | V | 1.5 | IF = 20 A, Typ |
| Forward voltage | VF | V | 2.1 | IF = 20 A, TJ = 175 C, Max |
| Reverse leakage current | IRM | A | 200 | VR = 1200 V, Max |
| Reverse leakage current | IRM | A | 6 | VR = 1200 V, Typ |
| Reverse leakage current | IRM | A | 100 | VR = 1200 V, TJ = 175 C, Max |
| Total capacitive charge | QC | nC | 91 | VR = 600 V, Max |
| Junction capacitance | CJ | pF | 1130 | VR = 1 V, = 1 MHz, Max |
| Junction capacitance | CJ | pF | 91 | VR = 400 V, = 1 MHz, Max |
| Junction capacitance | CJ | pF | 74 | VR = 800 V, = 1 MHz, Max |
2410122007_MICROCHIP-MSC020SDA120B_C5296850.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
