N Channel Power MOSFET Megain M4M-0040-120K Silicon Carbide with High Blocking Voltage and Easy Drive
Key Attributes
Model Number:
M4M-0040-120K
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
60A
RDS(on):
59mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11.5pF
Output Capacitance(Coss):
116pF
Input Capacitance(Ciss):
2.99nF
Pd - Power Dissipation:
313W
Gate Charge(Qg):
128nC
Mfr. Part #:
M4M-0040-120K
Package:
TO-247-4
Product Description
Product Overview
The M4M-0040-120K is a Silicon Carbide Power MOSFET designed for N-Channel Enhancement Mode operation. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive, with avalanche ruggedness. This MOSFET provides higher system efficiency, reduced cooling requirements, increased power density, and enables increased system switching frequency, making it ideal for motor drive applications.
Product Attributes
- Brand: M4M
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | VGSmax (V) | ID (A) @ TC=25C | ID (A) @ TC=100C | RDS(on) (m) @ VGS=18V, ID=33A, TC=25C | RDS(on) (m) @ VGS=18V, ID=33A, TC=175C | TJ, Tstg (C) | PD (W) @ TC=25C | RJC (C/W) |
| M4M-0040-120K | TO-247-4 | 1200 | -10/+20 | 60 | 40 | 45 | 67 | -55 to +175 | 313 | 0.48 |
2506251635_Megain-M4M-0040-120K_C49242766.pdf
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