Low Leakage Silicon Carbide Schottky Diode MICROCHIP MSC015SDA120B Designed for Switching Efficiency
Key Attributes
Model Number:
MSC015SDA120B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
109A
Reverse Leakage Current (Ir):
200uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.5V@15A
Current - Rectified:
39A
Mfr. Part #:
MSC015SDA120B
Package:
TO-247
Product Description
Product Overview
The MSC015SDA120B is a Zero Recovery Silicon Carbide Schottky Diode designed for high-frequency switching applications. It offers ultra-fast and soft recovery times, low forward voltage, and low leakage current, contributing to reduced switching losses, lower EMI, and increased system reliability and power density. Its avalanche energy rating further enhances its robustness.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide Schottky
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Ratings | Unit | Conditions |
| VR | Maximum DC reverse voltage | 1200 | V | |
| VRRM | Maximum peak repetitive reverse voltage | 1200 | V | |
| VRWM | Maximum working peak reverse voltage | 1200 | V | |
| IF | Maximum DC forward current | 39 | A | TC = 25 C |
| 17 | A | TC = 135 C | ||
| 14 | A | TC = 145 C | ||
| IFRM | Repetitive peak forward surge current | 55 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| IFSM | Non-repetitive forward surge current | 109 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| Ptot | Power dissipation | 167 | W | TC = 25 C |
| 72 | W | TC = 110 C | ||
| TJ, TSTG | Operating junction and storage temperature range | 55 to 175 | C | |
| TL | Lead temperature for 10 seconds | 300 | C | |
| EAS | Single pulse avalanche energy | 100 | mJ | Starting TJ = 25 C, L = 0.89 mH, peak IL = 15 A |
| RJC | Junction-to-case thermal resistance | 0.62 | C/W | |
| RJC | Junction-to-case thermal resistance | 0.90 | C/W | |
| WT | Package weight | 0.22 | oz | |
| WT | Package weight | 5.9 | g | |
| Mounting torque | 6-32 or M3 screw | 10 | lbf-in | |
| Mounting torque | 6-32 or M3 screw | 1.1 | N-m | |
| VF | Forward voltage | 1.5 | V | IF = 15 A, TJ = 25 C |
| 1.8 | IF = 15 A, TJ = 25 C | |||
| VF | Forward voltage | 2.0 | V | IF = 15 A, TJ = 175 C |
| IRM | Maximum reverse leakage count | 10 | A | VR = 1200 V, TJ = 25 C |
| 200 | VR = 1200 V, TJ = 25 C | |||
| IRM | Maximum reverse leakage count | 50 | A | VR = 1200 V, TJ = 175 C |
| QC | Total capacitive charge | 73 | nC | VR = 600 V, TJ = 25 C |
| CJ | Junction capacitance | 906 | pF | VR = 1 V, TJ = 25 C, f = 1 MHz |
| 80 | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| 59 | VR = 800 V, TJ = 25 C, f = 1 MHz |
Applications
- Power Factor Correction (PFC)
- Anti-parallel diode
- Switch-mode power supply
- Inverters/converters
- Motor controllers
- Freewheeling diode
- Snubber/clamp diode
2410121846_MICROCHIP-MSC015SDA120B_C3760132.pdf
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